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Constraints on removal of Si3N4 film with conformation-controlled poly(acrylic acid) in shallow-trench isolation chemical–mechanical planarization (STI CMP)

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Abstract

The effect of changes in poly(acrylic acid) (PAA) conformation on removal of Si3N4 film was investigated. PAA was used as a passivation agent by adsorption on an Si3N4 film in shallow-trench isolation chemical–mechanical planarization (STI CMP). Adsorption behavior of PAA on the Si3N4 film and the conformation transition were determined by adsorption isotherms and force measurements using atomic force microscopy (AFM) as a function of ionic strength. AFM results revealed that, as ionic strength increases, the repulsive force between the negatively charged carboxylate groups along the backbone of PAA is reduced due to counterion screening and to the changes of PAA conformation from a stretched to a coiled configuration. At high ionic strength, the coiled conformation of PAA formed a dense passivation layer on the Si3N4 film, which led to suppression of the removal rate of Si3N4 film from 72 to 61 Å/min in the STI CMP process.

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Authors and Affiliations

  1. Division of Advanced Materials Science Engineering, Hanyang University, Seoul, 133-791, Korea

    Ye-Hwan Kim, Seung-Mi Lee, Kee-June Lee & Ungyu Paik

  2. Nano-Silicon-On-Insulator (SOI) Process Laboratory, Hanyang University, Seoul, 133-791, Korea

    Jea-Gun Park

Authors
  1. Ye-Hwan Kim
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  2. Seung-Mi Lee
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  3. Kee-June Lee
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  4. Ungyu Paik
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  5. Jea-Gun Park
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Correspondence to Ungyu Paik or Jea-Gun Park.

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Kim, YH., Lee, SM., Lee, KJ. et al. Constraints on removal of Si3N4 film with conformation-controlled poly(acrylic acid) in shallow-trench isolation chemical–mechanical planarization (STI CMP). Journal of Materials Research 23, 49–54 (2008). https://doi.org/10.1557/JMR.2008.0031

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