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Photoluminescence and I–V characteristics of ZnS grown on silicon nanoporous pillar array

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Abstract

Silicon nanoporous pillar array (Si-NPA) is a silicon hierarchical structure with regularly patterned surface morphology. Through a heterogeneous reaction process, zinc sulfide nanocrystallites (nc-ZnS) were grown onto Si-NPA and a unique heterostructure of ZnS/Si-NPA was obtained. The formation of wurtzite nc-ZnS was proved by x-ray diffraction, and the average grain size was evaluated to be ∼18 nm. X-ray photoelectron spectroscopy disclosed that as-grown nc-ZnS was well separated from Si-NPA by a SiO2 thin layer of ∼1.3 nm. The photoluminescence (PL) spectrum of ZnS/Si-NPA showed that in addition to the two red PL bands peaked at ∼648 and ∼705 nm observed in Si-NPA, three other PL bands peaked at ∼365, ∼418, and ∼472 nm were observed and attributed to the PL from nc-ZnS. It was also demonstrated that as-prepared ZnS/Si-NPA heterostructure could exhibit good rectification characteristic featured by a high forward current density of ∼75 mA/cm2 at 2 V and high reverse breakdown voltage of ∼10 V. Our results indicated that ZnS/Si-NPA might be a valuable heterostructure nanosystem to be further probed for achieving enhanced optical and electrical properties.

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Acknowledgment

This work is supported by National Natural Science Foundation of China (NSFC, No. 10574112).

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Authors and Affiliations

  1. Department of Physics, Laboratory of Material Physics, Zhengzhou University, Zhengzhou, 450052, People’s Republic of China

    Hai Jun Xu, He Shun Jia, Zhi Tao Yao & Xin Jian Li

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  1. Hai Jun Xu
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  2. He Shun Jia
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  4. Xin Jian Li
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Correspondence to Xin Jian Li.

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Xu, H.J., Jia, H.S., Yao, Z.T. et al. Photoluminescence and I–V characteristics of ZnS grown on silicon nanoporous pillar array. Journal of Materials Research 23, 121–126 (2008). https://doi.org/10.1557/JMR.2008.0005

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