Abstract
The effects of salient testing parameters on four-point adhesion measurements of thin-film structures on silicon substrates were systematically studied. These included specimen geometry, applied displacement rate, and load point separation. Measured fracture energy values, Gc, were observed to increase as the ratio of applied moment arm to specimen thickness was decreased beyond a value of ∼4, particularly for specimens with Gc > 5 J/m2. Testing parameters that affect the steady-state crack velocity were also found to affect reported Gc values. The resulting trends in Gc values are shown to be related to loading-point friction and environmentally assisted cracking effects. Good practice testing guidelines are suggested to improve the accuracy and precision of four-point bend measurements.
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P.G. Charalambides, J. Lund, A.G. Evans R.M. McMeeking: A test specimen for determining the fracture resistance of bimaterial interfaces. J. Appl. Mech. 56(1), 77 1989
P.G. Charalambides, H.C. Cao, J. Lund A.G. Evans: Development of a test method for measuring the mixed-mode fracture resistance of bimaterial interfaces. Mech. Mater. 8(4), 269 1990
R.H. Dauskardt, M. Lane, Q. Ma N. Krishna: Adhesion and debonding of multi-layer thin film structures. Eng. Fract. Mech. 61(1), 141 1998
Q. Ma, H. Fujimoto, P. Flinn, V. Jain, F. Adibi-Rizi, F. Moghadam R.H. Dauskardt: Quantitative measurement of interface fracture energy in multi-layer thin film structures in Materials Reliability in Microelectronics V, edited by A.S. Oates, W.F. Filter, R. Rosenberg, A.L. Greer, and K. Gadepally, (Mater. Res. Soc. Symp. Proc. 391, Pittsburgh, PA, 1995), p. 91
Q. Ma, J. Bumgarner, H. Fujimoto, M. Lane R.H. Dauskardt: Adhesion measurement of interfaces in multilayer interconnect structures in Materials Reliability in Microelectronics VII, edited by J.J. Clement, R.R. Keller, K.S. Krisch, J.E. Sanchez, Jr., and Z. Suo (Mater. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997), p. 3
Q. Ma: A four-point bending technique for studying subcritical crack growth in thin films and at interfaces. J. Mater. Res. 12(3), 840 1997
M. Lane, R.H. Dauskardt, A. Vainchtein H. Gao: Plasticity contributions to interface adhesion in thin-film interconnect structures. J. Mater. Res. 15(12), 2758 2000
E.P. Guyer, M. Patz R.H. Dauskardt: Fracture of nanoporous methyl silsesquioxane thin-film glasses. J. Mater. Res. 21(4), 882 2006
D.A. Maidenberg, W. Volksen, R.D. Miller R.H. Dauskardt: Toughening of nanoporous glasses using porogen residuals. Nat. Mater. 3(7), 464 2004
C.S. Litteken R.H. Dauskardt: Adhesion of polymer thin-films and patterned lines. Int. J. Fract. 119(4-2), 475 2003
K.L. Ohashi, A.C. Romero, P.D. McGowan, W.J. Maloney R.H. Dauskardt: Adhesion and reliability of interfaces in cemented total joint arthroplasties. J. Orthop. Res. 16(6), 705 1998
J.W. Hutchinson Z. Suo: Mixed mode cracking in layered materials in Advances in Applied Mechanics, edited by J.W. Hutchinson and T.Y. Yu Academic Press New York 1991 63–191
R. Shaviv, S. Roham P. Woytowitz: Optimizing the precision of the four-point bend test for the measurement of thin film adhesion. Microelectron. Eng. 82(2), 99 2005
R. Cook E. Liniger: Stress-corrosion cracking of low-dielectric constant spin-on-glass thin films. J. Electrochem. Soc. 146(12), 4439 1999
S.M. Wiederhorn: Influence of water vapor on crack propagation in soda-lime glass. J. Am. Ceram. Soc. 50(8), 407 1967
E.P. Guyer R.H. Dauskardt: Effect of solution ph on subcritical crack growth in low-k dielectric thin-films. J. Mater. Res. 20(3), 680 2005
J.J. Vlassak, Y. Lin T.Y. Tsui: Fracture of organosilicate glass thin films: Environmental effects. Mater. Sci. Eng., A 391(1-2), 159 2005
M.W. Lane, J.M. Snodgrass R.H. Dauskardt: Environmental effects on interfacial adhesion. Microelectron. Reliab. 41(9-10), 1615 2001
T.A. Michalske S.W. Freiman: A molecular mechanism for stress corrosion in vitreous silica. J. Am. Ceram. Soc. 66(4), 284 1983
R.J. Hohlfelder, D.A. Maidenberg, R.H. Dauskardt, Y.G. Wei J.W. Hutchinson: Adhesion of benzocyclobutene-passivated silicon in epoxy layered structures. J. Mater. Res. 16(1), 243 2001
Z.J. Cui, S. Ngo G. Dixit: A sample preparation method for four point bend adhesion studies. J. Mater. Res. 19(5), 1324 2004
M. Lane, R. Ware, S. Voss, Q. Ma, H. Fujimoto R.H. Dauskardt: Progressive debonding of multilayer interconnect structures in Materials Reliability in Microelectronics VII, edited by J.J. Clement, R.R. Keller, K.S. Krisch, J.E. Sanchez, Jr., and Z. Suo (Mater. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997), p. 21
M. Lane, R.H. Dauskardt, N. Krishna I. Hashim: Adhesion and reliability of copper interconnects with Ta and TaN barrier layers. J. Mater. Res. 15(1), 203 2000
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This work was supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Science Division of the United States Department of Energy under Contract No. DE-FG03-95ER45543A009. Materials and fellowship support for DMG were provided by the Applied Materials Corporation, Santa Clara, CA.
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Gage, D.M., Kim, K., Litteken, C.S. et al. Role of friction and loading parameters in four-point bend adhesion measurements. Journal of Materials Research 23, 87–96 (2008). https://doi.org/10.1557/JMR.2008.0001
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DOI: https://doi.org/10.1557/JMR.2008.0001