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Characterization of highly-oriented ferroelectric PbxBa1−x TiO3 thin films grown by metalorganic chemical vapor deposition

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Abstract

PbxBa1−xTiO3 (0.2 ⩽ x ⩽ 1) thin films were deposited on single-crystal MgO as well as amorphous Si3N4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smaller grains (60 nm average) than those deposited on single-crystal MgO (300 nm average). Electron backscatter diffraction (EBSD) has been used to study the microtexture on both types of substrates and the results were consistent with x-ray pole figures and transmission electron microscopy (TEM) micrographs that indicated the presence of 90° domain boundaries, twins, in films deposited on single-crystal MgO substrates. In contrast, films on biaxially textured substrates consisted of small single-domain grains that were either c or a oriented. The surface-sensitive EBSD technique was used to measure the tetragonal tilt angle as well as in-plane and out-of-plane texture. High-temperature x-ray diffraction (HTXRD) of films with 90° domain walls indicated large changes, as much as 60%, in the c and a domain fractions with temperature, while such changes were not observed for PbxBa1−xTiO3 (PBT) films on biaxially textured MgO/Si3N4/Si substrates, which lacked 90° domain boundaries.

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  1. Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California, 91125, USA

    Mohamed Y. El -Naggar, David A. Boyd & David G. Goodwin

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  1. Mohamed Y. El -Naggar
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  2. David A. Boyd
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  3. David G. Goodwin
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Correspondence to David G. Goodwin.

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El -Naggar, M.Y., Boyd, D.A. & Goodwin, D.G. Characterization of highly-oriented ferroelectric PbxBa1−x TiO3 thin films grown by metalorganic chemical vapor deposition. Journal of Materials Research 20, 2969–2976 (2005). https://doi.org/10.1557/JMR.2005.0374

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