Skip to main content
SpringerLink
Log in

Structural variants in attempted heteroepitaxial growth of B12As2 on 6H–SiC (0001)

  • Article
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

Boron sub-arsenide, B12As2, is based on twelve-atom clusters of boron atoms and two-atom As–As chains. By contrast, SiC is a tetrahedrally bonded covalent semiconductor. Despite these fundamental differences, the basal plane hexagonal lattice constant of boron sub-arsenide is twice that of SiC. This coincidence suggests the possibility of heteroepitaxial growth of boron sub-arsenide films on properly aligned SiC. However, there are a variety of incommensurate alignments by which heteroepitaxial growth of B12As2 on (0001) 6H–SiC can occur. In this study, we first used geometrical crystallographic considerations to describe the possible arrangements of B12As2 on (0001) 6H–SiC. We identified four translational and two rotational variants. We then analyzed electron backscattered diffraction and transmission electron microscopy images for evidence of distinct domains of such structural variants. Micron-scale regions with each of the two possible rotational alignments of B12As2 icosahedra with the SiC surface were seen. On a finer length scale (100–300 nm) within these regions, boron-rich boundaries were found, consistent with those between pairs of the four equivalent translational variants associated with a two-to-one lattice match. Boron-carbide reaction layers were also observed at interfaces between SiC and B12As2.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D. Emin: Icosahedral boron-rich solids. Phys. Today 40, 55 (1987).

    Article  CAS  Google Scholar 

  2. W.N. Lipscomb: Boron Hydrides (W.A. Benjamin, New York, 1963).

    Google Scholar 

  3. Boron and Refractory Borides, edited by V.I. Matkovich (Springer-Verlag, New York, 1977).

  4. D. Emin, T. Aselage, C.L. Beckel, I.A. Howard and C. Wood: Boron-Rich Solids, edited by D. Emin, T. Aselage, C.L. Beckel, I.A. Howard, and C. Wood, AIP Conf. Proc., Vol. 140 (American Institute of Physics, New York, 1986).

  5. M. Carrard, D. Emin and L. Zuppiroli: Defect clustering and self-healing of electron-irradiated boron-rich solids. Phys. Rev. B 51, 11270 (1995).

    Article  CAS  Google Scholar 

  6. G.A. Slack, T.F. McNelly and E.A. Taft: Melt growth and properties of B6P crystals. J. Phys. Chem. Solids 44, 1009 (1983).

    Article  CAS  Google Scholar 

  7. D. Emin: Bonding and doping of simple icosahedral-boride semiconductors. J. Solid State Chem. 177, 1619 (2004).

    Article  CAS  Google Scholar 

  8. T.L. Aselage and D. Emin Beta Cell Device Using Icosahedral Boride Compounds, U.S. Patent 6 No. 479 919 (Nov. 12, 2002).

    Google Scholar 

  9. J.A. Perri, S. La Placa and B. Post: New group III—group V compounds—BP and BAs. Acta Crystall. 11, 310 (1958).

    Article  CAS  Google Scholar 

  10. F.V. Williams and R.A. Ruehrwein: The preparation and properties of boron phosphides and arsenides. J. Am. Chem. Soc. 82, 1330 (1960).

    Article  CAS  Google Scholar 

  11. R.A. Greene Jr. and P.E. Burmeister: Synthesis and growth of B6P. Trans. Met. Soc. AIME 239, 408 (1967).

    Google Scholar 

  12. T.L. Chu, J.M. Jackson, A.E. Hyslop and S.C. Chu: Crystals and epitaxial layers of boron phosphide. J. Appl. Phys. 42, 420 (1971).

    Article  CAS  Google Scholar 

  13. M. Takigawa, M. Hirayama and K. Shohno: Hetero-epitaxial growth of lower boron phosphide on silicon substrates using PH3–B2H6–H2 system. Jpn. J. Appl. Phys. 12, 1504 (1973).

    Article  CAS  Google Scholar 

  14. M. Hirayama and K. Shohno: Hetero-epitaxial growth of lower boron arsenide on Si substrate using AsH3–B2H6–H2 system. Jpn. J. Appl. Phys. 12, 1960 (1973).

    Article  CAS  Google Scholar 

  15. T. Takenaka and K. Shohno: Double-layer epitaxial growth of Si and B13P2 on Si substrates and some electrical properties of Si layers. Jpn. J. Appl. Phys. 13, 1211 (1974).

    Article  CAS  Google Scholar 

  16. V.E. Amberger and P.A. Rauh: Structure of boron-rich phosphides, Acta Crystall. B30, 2549 (1974).

    Article  CAS  Google Scholar 

  17. T.L. Chu and A.E. Hyslop: Preparation and properties of boron arsenide films. J. Electrochem. Soc. 121, 412 (1974).

    Article  CAS  Google Scholar 

  18. K. Shohno, M. Takigawa and T. Nakada: Epitaxial growth of BP compounds on Si substrates using the B2H6–PH3–H2 system. J. Cryst. Growth 24/25, 193 (1974).

    Article  Google Scholar 

  19. L.A. Correia, R.C. van Oort and P.J. van der Put: Chemical vapor deposition of boron subarsenide using halide reactants. React. Solids 2, 203 (1986).

    Article  CAS  Google Scholar 

  20. T.L. Aselage: Preparation of boron-rich refractory semiconductors, in Novel Refractory Semiconductors, edited by D. Emin, T.L. Aselage, and C. Wood (Mater. Res. Soc Symp. Proc. 97, Pittsburgh, PA, 1987), p. 101.

    CAS  Google Scholar 

  21. Y. Kumashiro, H. Yoshizawa and T. Yokoyama: Epitaxial growth of rhombohedral boron phosphide single crystal films by chemical vapor deposition. J. Solid State Chem. 133, 104 (1997).

    Article  CAS  Google Scholar 

  22. R.H. Wang, D. Zubia, T. O’Neil, D. Emin, T. Aselage, W. Zhang and S.D. Hersee: Chemical vapor deposition of B12As2 thin films on 6H–SiC. J. Electron. Mater. 29, 1304 (2000).

    Article  CAS  Google Scholar 

  23. R. Nagarajan, J.H. Edgar, J. Pomeroy, M. Kuball and T. Aselage: Investigation of thin film growth of B12As2 by chemical vapor deposition, in New Applications for Wide-Bandgap Semiconductors, edited by J.J. Chyi, S.J. Pearton, J. Han, A.G. Baca, J.I. Chyi, and W.H. Chang (Mater. Res. Soc. Symp. Proc. 764, Warrendale, PA 2003), p. 283.

    CAS  Google Scholar 

  24. W.A. Vetter, R. Nagarajan, J.H. Edgar and M. Dudley: Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition. Mater. Lett. 581331 (2004).

    Google Scholar 

  25. R. Nagarajan, Z. Xu, J.H. Edgar, F. Baig, J. Chaudhuri, Z. Rek, E.A. Payzant, H.M. Meyer, J. Pomeroy and M. Kuball: Crystal growth of B12As2 on SiC substrate by CVD method. J. Crystal Growth 273, 431 (2005).

    Article  CAS  Google Scholar 

  26. D.J. Prior, P.W. Trimby, U.D. Weber and D.J. Dingley: Orientation contrast imaging of microstructures in rocks using forescatter detectors in the scanning electron microscope. Mineral. Mag. 60, 859 (1996).

    Article  CAS  Google Scholar 

  27. M.H. Jacobs and M.J. Stowell: Moire patterns and coherent double-positioning boundaries in 111 epitaxial gold films. Philos. Mag. 11, 591 (1966).

    Article  Google Scholar 

  28. M.P. Siegal, Saudia National Laboratories, 2003, private communication.

    Google Scholar 

  29. B. Morosin, A.W. Mullendore, D. Emin and C. Wood: Rhombohedral crystal structure of compounds containing boron-rich icosahedra, in Boron-Rich Solids, edited by D. Emin, T. Aselage, C.L. Beckel, I.A. Howard, and C. Wood, AIP Conf. Proc., Vol. 140 (American Institute of Physics, New York, 1986), p. 70.

Download references

Author information

Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, New Mexico, 87185, USA

    J. R. Michael & T. L. Aselage

  2. Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico, 87131, USA

    David Emin

  3. Sandia National Laboratories, Albuquerque, New Mexico, 87185, USA

    P. G. Kotula

Authors
  1. J. R. Michael
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. L. Aselage
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. David Emin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. G. Kotula
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. R. Michael.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Michael, J.R., Aselage, T.L., Emin, D. et al. Structural variants in attempted heteroepitaxial growth of B12As2 on 6H–SiC (0001). Journal of Materials Research 20, 3004–3010 (2005). https://doi.org/10.1557/JMR.2005.0367

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.2005.0367

Search

Navigation