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RETRACTED ARTICLE: Influence of electrode modification by Ar+ ion beam upon passivation and electrical characteristics in organic light-emitting diodes

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This article was retracted on 01 June 2006

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Abstract

Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H2O and O2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p-phenylene vinylene.

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Authors and Affiliations

  1. Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea

    Soon Moon Jeong, Won Hoi Koo, Sang Hun Choi, Sung Jin Jo & Hong Koo Baik

  2. Department of Materials Engineering, Kyungsung University, Busan, 608-736, Korea

    Se-Jong Lee

  3. Department of Applied Physics, Konkuk University, Chungju, 380-701, Korea

    Kie Moon Song

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  1. Soon Moon Jeong
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Jeong, S.M., Koo, W.H., Choi, S.H. et al. RETRACTED ARTICLE: Influence of electrode modification by Ar+ ion beam upon passivation and electrical characteristics in organic light-emitting diodes. Journal of Materials Research 20, 81–92 (2005). https://doi.org/10.1557/JMR.2005.0004

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  • DOI: https://doi.org/10.1557/JMR.2005.0004

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