Abstract
We report properties of devices made by the adhesion of semiconductor crystals, including several tetracene specimens, to polymer gate dielectrics along with measurements of tetracene crystals on conventional Si/SiO2 dielectric surfaces. For the best tetracene, pentacene, and alpha-6T devices, mobilities exceeding 0.1 cm2/V were measured, correlating well with expectations based on the literature, and in the case of tetracene and alpha-6T, exceeding the thin film mobility value. The devices were prepared in the open laboratory using simpler crystal handling techniques than had been thought necessary.
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Katz, H.E., Kloc, C., Sundar, V. et al. Field-effect transistors made from macroscopic single crystals of tetracene and related semiconductors on polymer dielectrics. Journal of Materials Research 19, 1995–1998 (2004). https://doi.org/10.1557/JMR.2004.0254
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DOI: https://doi.org/10.1557/JMR.2004.0254