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Imaging of piezoelectric activity in laser-ablated c-axis-oriented LiNbO3/ZnO thin film multilayer on glass using atomic force microscopy

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Abstract

A LiNbO3/ZnO multilayer with a preferred c-axis orientation normal to the plane of the substrate was grown on glass and SiO2/Si substrates by laser ablation. The piezoelectric activity in as-deposited films was demonstrated using a novel approach to the atomic force microscope. In the presence of an in-plane, low-frequency (0.1–5 Hz) alternating current electric field, we monitored and imaged the induced piezoelectric response normal to the film plane between two electrodes.

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Authors and Affiliations

  1. Department of Physics and Astrophysics, University of Delhi, 110007, Delhi, India

    Parmanand Sharma

  2. Department of Materials Science-Tmfy-MSE, Royal Institute of Technology, S-100 44, Stockholm, Sweden

    K. Sreenivas, L. M. Belova & K. V. Rao

  3. and General Physics Institute, 117942, Moscow, Russia

    K. Sreenivas, L. M. Belova & K. V. Rao

  4. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-Ku, 980-8577, Sendai, Japan

    Parmanand Sharma

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  1. Parmanand Sharma
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  2. K. Sreenivas
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  3. L. M. Belova
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  4. K. V. Rao
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Correspondence to Parmanand Sharma.

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Sharma, P., Sreenivas, K., Belova, L.M. et al. Imaging of piezoelectric activity in laser-ablated c-axis-oriented LiNbO3/ZnO thin film multilayer on glass using atomic force microscopy. Journal of Materials Research 18, 2025–2028 (2003). https://doi.org/10.1557/JMR.2003.0284

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  • DOI: https://doi.org/10.1557/JMR.2003.0284

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