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Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

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Abstract

Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charged liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280 °C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300 °C and subsequently annealed at 700 °C, were 2.5 × 10−9 A/cm2 at 1.5 V and 305, respectively.

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Author notes

  1. Yi Yang

    Present address: KLA-Tencor Corporation, M/S I-1216, 160 Rio Robles, San Jose, CA, 95134, USA

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    Hyungsoo Choi & Sungho Park

  2. Thin Film and Charged Particle Research Laboratory, Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    Yi Yang, HoChul Kang & Kyekyoon (Kevin) Kim

  3. Department of Electrical Engineering and Division of Chemistry and Molecular Engineering, Korea University, Seoul, 136-701, Korea

    M. Y. Sung & Ho G. Jang

  4. Department of Electrical Engineering, Korea University, USA

    M. Y. Sung

  5. Division of Chemistry and Molecular Engineering, Korea University, USA

    Ho G. Jang

Authors
  1. Hyungsoo Choi
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  2. Sungho Park
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  3. Yi Yang
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  4. HoChul Kang
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  5. Kyekyoon (Kevin) Kim
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  6. M. Y. Sung
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  7. Ho G. Jang
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On leave from Korea University.

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Choi, H., Park, S., Yang, Y. et al. Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method. Journal of Materials Research 17, 1888–1891 (2002). https://doi.org/10.1557/JMR.2002.0279

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  • DOI: https://doi.org/10.1557/JMR.2002.0279

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