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Fatigue-free La-modified Pb(Zr, Ti)O3 capacitors using aseed layer

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Abstract

The development of lead zirconate titanate (PZT)-based capacitors using common Pt electrodes has been a long-time goal of ferroelectric random access memories (FRAM).In this work, a series of Pb1−xLax(Zr0.55Ti0.45)O3 capacitors (for 0.01 < x < 0.05) having fatigue-free characteristics have been grown on Pt/ Ti/SiO2/Si substrates. Typically 2–3 mol% La-modified PZT capacitors fabricated at 580 °C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 × 1010 switching cycles, a low coercive field of 50–55 kV/cm, and a stable charge retention profile with time, all of which assure their suitability for the future nonvolatile FRAM.

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Authors and Affiliations

  1. Department of Materials Science and Engineering and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea

    Santiranjan R. Shannigrahi, Sun-Hwa Lee & Hyun M. Jang

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  1. Santiranjan R. Shannigrahi
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  2. Sun-Hwa Lee
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  3. Hyun M. Jang
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Correspondence to Hyun M. Jang.

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Shannigrahi, S.R., Lee, SH. & Jang, H.M. Fatigue-free La-modified Pb(Zr, Ti)O3 capacitors using aseed layer. Journal of Materials Research 17, 1884–1887 (2002). https://doi.org/10.1557/JMR.2002.0278

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  • DOI: https://doi.org/10.1557/JMR.2002.0278

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