Abstract
Si film has been grown on a wurtzite gallium nitride layer on sapphire by low-pressure chemical vapor deposition. Uniform nitrogen incorporation was found in the Si film at the concentration of 5%, indicating an incorporation-limited process through interstitial diffusion from GaN layer to Si layer. The nitrogen occupied the substitutional sites in the Si film, leading this Si layer to be n-type doping with the carrier concentration of 1.42 × 1018/cm3 and the hall mobility of 158 cm2/(V s). This is consistent with other calculated and experimental results, which suggest that only 5% nitrogen can occupy the substitutional sites in the nitrogen-doped Si materials.
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Chen, P., Zheng, Y.D., Zhu, S.M. et al. Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition. Journal of Materials Research 17, 1881–1883 (2002). https://doi.org/10.1557/JMR.2002.0277
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DOI: https://doi.org/10.1557/JMR.2002.0277