Abstract
The oxidation behavior of sputtered TiAlN thin-film barrier layers was studied by cross-section transmission electron microscopy Bare 100-nm-thick TiAlN films on SiO2/Si began to oxidize from the surface after annealing in air for 10 min from about 550 °C Annealing at 700 °C oxidized half of the layer thickness. A 100-nm-thick Pt overlayer on the barrier layer retarded macroscopic oxidation at 650 °C. However, a 10-nm-thick Pt overlayer accelerated oxidation as a result of the catalytic dissociation of O2 molecules to form O atoms, which oxidized the barrier layer at 550 °C to the same extent as without the thin Pt overlayer at 650 °C. The effects of other thin metal overlayers, such as Ru and Ir, were also investigated. Ru and Ir did not accelerate TiAlN oxidation due to the absence of catalytic activity.
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Song, J., Kim, H.R., Park, J. et al. Oxidation Behavior of TiAlN Barrier Layers with and without Thin Metal Overlayers for Memory Capacitor Applications. Journal of Materials Research 17, 1789–1794 (2002). https://doi.org/10.1557/JMR.2002.0265
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DOI: https://doi.org/10.1557/JMR.2002.0265