Abstract
The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
IPC Roadmap, A Guide for Assembly of Lead-free Electronics (Draft IV, Northbrook, IL, Nov. 1999).
Lead-free Solder Project Final Report (National Center for Manufacturing Science, Ann Arbor, MI, Aug. 1997).
M. Abtew and G. Selvaduray, Mater. Sci. Eng. 27, 95 (2000).
J. Glazer, J. Electron. Mater. 23, 693 (1994).
T.M. Korhonen, P. Su, S.J. Hong, M.A. Korhonen, and C.Y. Li, J. Electron. Mater. 28, 1146 (1999).
R. Tummala, Fundamentals of Microsystems Packaging (McGraw Hill, New York, 2000), Chap. 9.
G.Z. Pan, A.A. Liu, H.K. Kim, K.N. Tu, and P.A. Totta, Appl. Phys. Lett. 71, 2946 (1997).
P. Elenius, Solid State Technol. 45 (Apr. 1999).
H. Balkan, J. Sanchez, G. Burgess, M. Johnson, C. Carlson, B. Rooney, D. Stepniak, J. Wood, D. Patterson, and P. Elenius, in Flip Chip Technology Workshop, June 18–20, 2001, Austin, TX (IMAPS, Reston, VA, 2001), p. 426.
K.N. Tu, T.Y. Lee, J.W. Jang, L. Li, D.R. Frear, K. Zeng, and J.K. Kivilahti, J. Appl. Phys. 89, 4843 (2001).
C.Y. Liu, K.N. Tu, T.T. Sheng, C.H. Tung, D.R. Frear, and P. Elenius, J. Appl. Phys. 87, 750 (2000).
P.S. Teo, Y.W. Huang, C.H. Tung, M.R. Marks, and T.B. Lim, in Proceedings of the 50th Electronic Components & Technology Conference, May 21–24, 2000, Las Vegas, NV (IEEE, Piscataway, NJ, 2000), p. 33.
A.A. Liu, H.K. Kim, K.N. Tu, and P.A. Totta, J. Appl. Phys. 80, 2774 (1996).
H.K. Kim, K.N. Tu, and P.A. Totta, Appl. Phys. Lett. 68, 2204 (1996).
H. Ohtani, K. Okuda, and K. Ishida, J. Phase Equilib. 16, 416 (1995).
J-H. Shim, C-S. Oh, B-J. Lee, and D.N. Lee, Z. Metallkd. 87, 205 (1996).
A. Bolcavage, C.R. Kao, S.L. Chen, and Y.A. Chang, in Proceedings of Applications of Thermodynamics in the Synthesis and Processing of Materials, edited by P. Nash and B. Sundman, Oct. 2–6, 1994, Rosemont, IL (TMS, Warrendale, PA, 1995), p. 171.
F.H. Hayes, H.L. Lukas, G. Effenberg, and G. Petzow, Z. Metallkd. 77, 749 (1986).
C-S. Oh, J-H. Shim, B-J. Lee, and D.N. Lee, J. Alloys Compd. 238, 155 (1996).
K-W. Moon, W.J. Boettinger, U.R. Kattner, F.S. Biancaniello, and C.A. Handwerker, J. Electron. Mater. 29, 1122 (2000).
P.G. Kim, J.W. Jang, T.Y. Lee, and K.N. Tu, J. Appl. Phys. 86, 6746 (1999).
R.J.K. Wassink, Soldering in Electronics, 2nd ed. (Electrochemical Publications Limited, Isle of Man, British Isles, United Kingdom, 1989).
J.W. Jang, P.G. Kim, K.N. Tu, D.R. Frear, and P. Thompson, J. Appl. Phys. 85, 8456 (1999).
D. Frear, F. Hosking, and P. Vianco, in Proceedings of Materials Developments in Microelectronic Packaging: Performance and Reliability, Aug. 19–22, 1991, Montreal, Quebec, Canada (ASM International, Materials Park, OH, 1991), p. 229.
K. Zeng, V. Vuorinen, and J.K. Kivilahti, in Proceedings of 51st Electronic Components & Technology Conference, May 29–June 31, 2001, Orlando, FL (IEEE, Piscataway, NJ, 2001), p. 685.
K. Zeng and J.K. Kivilahti, J. Electron. Mater. 30, 35 (2001).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Li, M., Zhang, F., Chen, W.T. et al. Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films. Journal of Materials Research 17, 1612–1621 (2002). https://doi.org/10.1557/JMR.2002.0239
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.2002.0239