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Reactive sputter deposition of highly oriented AlN films at room temperature

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Abstract

Textured as well as epitaxial thin AlN films are of great interest for a wide range of electro-acoustic and optoelectronic applications. Reduction of the deposition temperature is of vital importance in a number of applications due to thermal budget limitations. In this work we systematically studied the influence of the process parameters on the film properties and identified the factors leading to improved film quality as well as reduced deposition temperature with pulsed direct current sputtering in an Ar/N2 atmosphere. We demonstrated that fully textured (0002) films can be grown under a wide range of conditions. At the same time the full width at half-maximum (FWHM) of the rocking curve of the (0002) XRD peak was found to vary systematically with process conditions—depostion rate, process pressure, gas composition, and substrate temperature. The best films showed a FWHM of 1.2°. We found that by far the most important factor is the arrival energy of the sputtered Al atoms, which is primarily controlled by the process pressure. We report for the first time that fully textured AlN films with a FWHM of under 2° can be grown at room temperature. Other important factors are the ion and electron bombardment of the films and substrate temperature as well as gas composition, although their influence is not as dramatic. Generally, the film quality increases with temperature. Bias and electron bombardment within a certain range also lead to better films.

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Authors and Affiliations

  1. The Ångström Laboratory, Uppsala University, P.O. Box 534, Se-751 21, Uppsala, Sweden

    G. F. Iriarte, F. Engelmark & I. V. Katardjiev

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  1. G. F. Iriarte
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  2. F. Engelmark
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  3. I. V. Katardjiev
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Iriarte, G.F., Engelmark, F. & Katardjiev, I.V. Reactive sputter deposition of highly oriented AlN films at room temperature. Journal of Materials Research 17, 1469–1475 (2002). https://doi.org/10.1557/JMR.2002.0218

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  • DOI: https://doi.org/10.1557/JMR.2002.0218

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