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Crystallization kinetics of sol-gel-derived (1x)SrBi2Ta2O9–xBi3TiTaO9 ferroelectric thin films

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Abstract

The crystallization kinetics of Sr0.7Bi2.3Ta2O9 (SBT) and 0.7SrBi2Ta2O9–0.3Bi3TiTaO9 (SBT-BTT) thin films formed by the sol-gel and spin coating techniques were studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetic analysis was performed on the x-ray diffraction results of the thin films heated in the range of 730 to 760 °C at 10 °C intervals. Activation energy and Avrami exponent values were determined for the fluorite-to-Aurivillus phase transformation. A reduction of approximately 51 kJ/mol in activation energy was observed for the SBT-BTT thin films, and an Avrami exponent value of approximately 1.0 was obtained for both the SBT and SBT-BTT. A comparison is made, and the possible crystallization mechanism is discussed.

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Authors and Affiliations

  1. Department of Materials Science –711, Functional Nanostructured Materials Laboratory (FNML), Korea

    Woo-Chul Kwak & Yun-Mo Sung

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  1. Woo-Chul Kwak
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  2. Yun-Mo Sung
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Correspondence to Woo-Chul Kwak.

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Kwak, WC., Sung, YM. Crystallization kinetics of sol-gel-derived (1x)SrBi2Ta2O9–xBi3TiTaO9 ferroelectric thin films. Journal of Materials Research 17, 1463–1468 (2002). https://doi.org/10.1557/JMR.2002.0217

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  • DOI: https://doi.org/10.1557/JMR.2002.0217

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