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Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

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Abstract

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

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Authors and Affiliations

  1. Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

    Wei-Fang Su & Hong-Ru Guo

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  1. Wei-Fang Su
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  2. Hong-Ru Guo
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Su, WF., Guo, HR. Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders. Journal of Materials Research 17, 977–980 (2002). https://doi.org/10.1557/JMR.2002.0145

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  • DOI: https://doi.org/10.1557/JMR.2002.0145

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