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Subcritical Crack Growth in Single-crystal Silicon Using Micromachined Specimens

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Abstract

A micromachined specimen with a test section only 150-μm thick was developed for investigating subcritical crack growth in silicon. Crack growth rates in the range 10−4–10−10 m/s were measured as a function of applied stress intensity (v–K curves) during tests in humid air and dry nitrogen lasting up to 24 h. The fracture toughness, KIc of {110} silicon was also measured at 1.15 ± 0.08 MPa m1/2. While some evidence MPa-m1/2 of subcritical crack growth appeared to occur in the region 0.9 KIc < K > 0.98 KIc, the extremely high crack growth exponent (n 100) and the high ratio of the apparent stress corrosion threshold, KIscc, to the fracture toughness, KIscc/KIc > 0.9, suggests that no clear evidence exists for a stress corrosion process in silicon exposed to humid air.

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Author notes

  1. A. M. Fitzgerald

    Present address: Sensant Corporation, 14470 Doolittle Dr., San Leandro, 94577, CA, USA

Authors and Affiliations

  1. Dept. of Aeronautics and Astronautics, Stanford University, Stanford, 94305, California, USA

    A. M. Fitzgerald

  2. Dept. of Materials Science and Engineering, Stanford University, Stanford, 94305, California, USA

    R. S. Iyer, R. H. Dauskardt & T. W. Kenny

Authors
  1. A. M. Fitzgerald
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  2. R. S. Iyer
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  3. R. H. Dauskardt
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  4. T. W. Kenny
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Correspondence to A. M. Fitzgerald.

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Fitzgerald, A.M., Iyer, R.S., Dauskardt, R.H. et al. Subcritical Crack Growth in Single-crystal Silicon Using Micromachined Specimens. Journal of Materials Research 17, 683–692 (2002). https://doi.org/10.1557/JMR.2002.0097

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  • DOI: https://doi.org/10.1557/JMR.2002.0097

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