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Diffuse Phase Transition in Epitaxial BaTiO3 Thin Films

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Abstract

The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

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Authors and Affiliations

  1. Materials Research Center and Materials Science & Engineering Department, Northwestern University, 2225 North Campus Drive, Evanston, 60208, Illinois, USA

    Soma Chattopadhyay, A. R. Teren, Jin-Ha Hwang, T. O. Mason & B. W. Wessels

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  1. Soma Chattopadhyay
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  2. A. R. Teren
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  3. Jin-Ha Hwang
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  4. T. O. Mason
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  5. B. W. Wessels
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Chattopadhyay, S., Teren, A.R., Hwang, JH. et al. Diffuse Phase Transition in Epitaxial BaTiO3 Thin Films. Journal of Materials Research 17, 669–674 (2002). https://doi.org/10.1557/JMR.2002.0095

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