Abstract
The negative transverse magnetoresistance of boron-doped graphite at liquid-nitrogen temperature has been studied in detail using 3000 °C-treated Grafoil(commercially available graphite foil), with the measurements of interlayer spacingd002 at room temperature, the Hall coefficient and electrical resistivity at liquid-nitrogen temperature, and temperature dependence of the resistivity in a temperature range 1.7–273 K. The negative transverse magnetoresistance can be measured for the specimens with hole carriers having the Fermi energy lower than −0.07 eV, estimatedby the Slonczewski–Weiss–McCure (SWMcC) band model using the Hall coefficient data. Characteristic feature of the negative transverse magnetoresistance has been investigated in terms of the SWMcC band model and a weak localization theory obtained by extending Kawabata’s theory.
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Hishiyama, Y., Matustani, T., Suzuki, M. et al. Negative Transverse Magnetoresistance of Boron-doped Graphite at Liquid-nitrogen Temperature in Relation to 3D Weak Localization. Journal of Materials Research 17, 75–82 (2002). https://doi.org/10.1557/JMR.2002.0013
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DOI: https://doi.org/10.1557/JMR.2002.0013