Abstract
This paper reports on a study of stress in thin silicon plates sectioned from wafers by a near-infrared transmission technique. Phase stepping was incorporated to determine the magnitude and orientation of stress from fractional birefringence fringe images. The anisotropic relative optic-stress coefficient of (100) silicon was determined and the limitation of the stress orientation measurement is discussed.
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Zheng, T., Danyluk, S. Study of Stresses in Thin Silicon Wafers with Near-infraredphase Stepping Photoelasticity. Journal of Materials Research 17, 36–42 (2002). https://doi.org/10.1557/JMR.2002.0008
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DOI: https://doi.org/10.1557/JMR.2002.0008