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Low-temperature Crystallization of SrBi2Ta2O9 Thin Filmswith Bi2O3 Interfacial Layers by Liquid-delivery Metalorganicchemical Vapor Deposition

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Abstract

Ferroelectric SrBi2Ta2O9 (SBT) thin films and Bi2O3 interfacial layers were depositedonto the Pt/Ti/SiO2/Si substrates via liquid-delivery metalorganic chemical vapordeposition. The SBT films with a 5-nm-thick Bi2O3 interfacial layer were well crystallized without c-axis orientation, even at deposition temperature of 540 °C and showed a stronger (115) orientation than those without a Bi2O3 layer with increasing annealing temperature. The remanent polarizations of SBT films with Bi2O3 interfacial layer were significantly improved in comparison with those without Bi2O3 layer. The remanent polarization (2Pr) and coercive field (Ec) of SBT films without and with aBi2O3 interfacial layer annealed at 750 °C were 12 and 21 μC/cm2 and 60 and38 kV/cm, respectively, at an applied voltage of 5 V.

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Authors and Affiliations

  1. Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764, Taejon, Korea

    Woong-Chul Shin, Kyu-Jeong Choi & Soon-Gil Yoon

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  1. Woong-Chul Shin
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  2. Kyu-Jeong Choi
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  3. Soon-Gil Yoon
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Shin, WC., Choi, KJ. & Yoon, SG. Low-temperature Crystallization of SrBi2Ta2O9 Thin Filmswith Bi2O3 Interfacial Layers by Liquid-delivery Metalorganicchemical Vapor Deposition. Journal of Materials Research 17, 26–30 (2002). https://doi.org/10.1557/JMR.2002.0006

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