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Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

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Abstract

Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.

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Authors and Affiliations

  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, CB2 3QZ#, Cambridge, United Kingdom

    S. J. Lloyd, J. M. Molina-Aldareguia & W. J. Clegg

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  1. S. J. Lloyd
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  2. J. M. Molina-Aldareguia
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  3. W. J. Clegg
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Lloyd, S.J., Molina-Aldareguia, J.M. & Clegg, W.J. Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy. Journal of Materials Research 16, 3347–3350 (2001). https://doi.org/10.1557/JMR.2001.0461

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  • DOI: https://doi.org/10.1557/JMR.2001.0461

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