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Effect of material properties on integration damage in organosilicate glass films

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Abstract

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

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Authors and Affiliations

  1. Advanced Micro Devices, AMD/Motorola Alliance, 3501 Ed Bluestein Boulevard, 78721, Austin, Texas, USA

    E. Todd Ryan & Jeremy Martin

  2. Motorola, APRDL, 3501 Ed Bluestein Boulevard, 78721, Austin, Texas, USA

    Kurt Junker

  3. International SEMATECH, 2706 Montopolis Drive, 78757, Austin, Texas, USA

    Jeff Wetzel, David W. Gidley & Jianing Sun

Authors
  1. E. Todd Ryan
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  2. Jeremy Martin
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  3. Kurt Junker
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  4. Jeff Wetzel
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  5. David W. Gidley
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  6. Jianing Sun
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Correspondence to E. Todd Ryan.

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Ryan, E.T., Martin, J., Junker, K. et al. Effect of material properties on integration damage in organosilicate glass films. Journal of Materials Research 16, 3335–3338 (2001). https://doi.org/10.1557/JMR.2001.0458

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  • DOI: https://doi.org/10.1557/JMR.2001.0458

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