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Chemical stresses induced by grain-boundary diffusion in thin films

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Abstract

Chemical stresses induced by grain-boundary diffusion in thin films were analyzed. The stress distribution consisted of both tension and compression fields, and its characteristics were similar to those obtained for a semi-infinite solid. At a given time, the maximum stress (tension or compression) increased with increasing film thickness for both constant and instantaneous sources; it was generally higher than that in the semi-infinite system. The maximum stress (tension or compression) decreased as the diffusion time increased and at a given time and film thickness it increased with decreasing diffusivity ratio. The buildup of local stress is likely to cause damage and malfunctions of the film when used in an electronic device.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

    W. L. Wang

  2. Department of Chemical and Biochemical Engineering and Materials Science, University of California at Irvine, 92697, Irvine, California, USA

    Y. T. Chou

  3. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

    Sanboh Lee

Authors
  1. W. L. Wang
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  2. Y. T. Chou
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  3. Sanboh Lee
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Wang, W.L., Chou, Y.T. & Lee, S. Chemical stresses induced by grain-boundary diffusion in thin films. Journal of Materials Research 16, 1967–1974 (2001). https://doi.org/10.1557/JMR.2001.0269

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  • DOI: https://doi.org/10.1557/JMR.2001.0269

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