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Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

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Abstract

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

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Authors and Affiliations

  1. RIKEN (Institute of Physical and Chemical Research), 2-1 Hirosawa, 351-0198, Wako-shi, Saitama, Japan

    Kwang Soo Seol

  2. Department of Electrical, Electronics, and Computer Engineering, Waseda University, 169-8555, Shinjuku-ku, Tokyo, Japan

    Hironao Hiramatsu & Yoshimichi Ohki

  3. Division of Materials Science and Engineering, Korea University, 5-1 Anam-dong, 136-701, Sungbuku-ku, Seoul, Korea

    In-Hoon Choi

  4. KIST, P.O. Box 131, 130-650, Cheongryang, Seoul, Korea

    Yong-Tea Kim

  5. Advanced Research Institute for Science and Engineering, Waseda University, 169-8555, Shinjuku-ku, Tokyo, Japan

    Kwang Soo Seol & Yoshimichi Ohki

Authors
  1. Kwang Soo Seol
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  2. Hironao Hiramatsu
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  3. Yoshimichi Ohki
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  4. In-Hoon Choi
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  5. Yong-Tea Kim
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Correspondence to Yoshimichi Ohki.

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Seol, K.S., Hiramatsu, H., Ohki, Y. et al. Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films. Journal of Materials Research 16, 1883–1886 (2001). https://doi.org/10.1557/JMR.2001.0257

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  • DOI: https://doi.org/10.1557/JMR.2001.0257

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