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Characterization of NOx sensor using doped In2O3

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Abstract

To develop a highly sensitive gas sensor monitoring NOx, various kinds of n-type semiconductors made of In2O3 were prepared, and the relations between doped elements and gas sensitivities or response times were studied. Consequently, it was found that the samples doped with less than 1 at.% alkali-earth metal components have high sensitivities and responsiveness. The gas-absorbing phenomena were investigated using highly sensitive thermal analysis. From the result, it was indicated that alkali-earth component-doped In2O3 materials have higher adsorption ability of NOx than pure In2O3 has.

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Authors and Affiliations

  1. Department of Materials Science, Faculty of Engineering, Tottori University, Minami 4-101, Koyamacho, 680-0945, Tottori, Japan

    Shinichiro Tanaka & Takao Esaka

Authors
  1. Shinichiro Tanaka
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  2. Takao Esaka
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Correspondence to Takao Esaka.

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Tanaka, S., Esaka, T. Characterization of NOx sensor using doped In2O3. Journal of Materials Research 16, 1389–1395 (2001). https://doi.org/10.1557/JMR.2001.0194

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  • DOI: https://doi.org/10.1557/JMR.2001.0194

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