Abstract
Nanocrystalline nickel films of about 0.1 μm thickness grown by sputtering with and without substrate bias possessed average grain sizes of 9–25 nm. Variation in substrate bias at room and liquid nitrogen temperature of deposition strongly affected grain structure and size distribution. Qualitative studies of film surfaces showed variation in roughness and porosity level with substrate bias and film thickness (maximum of 8 μm). The films had tensile residual stress, which varied with deposition conditions. The hardness values were much higher than those of coarse-grained nickel but decreased with an increase in the film thickness because of grain growth.
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P.G. Sanders, J.A. Eastman, and J.R. Weertman, Acta Mater. 45, 4019 (1997).
J.R. Weertman, D. Farkas, K. Hemker, H. Kung, M. Mayo, R. Mitra, and H. VanSwygenhoven, MRS Bull. 24(2), 44 (1999).
B.R. Elliot, Ph.D. Dissertation, Northwestern University, Evanston, IL (December 1998).
M. Zupan, M. Legros, B.R. Elliott, and K.J. Hernker, in Advanced Materials for the 21st Century: The JuliaR. Weertman Symposium, edited Y-W. Chung, D.C. Dunand, P.K. Liaw, and G.B. Olson (TMS, Warrendale, PA, 1999), p. 525.
R. Birringer, H. Gleiter, H-P. Klein, and P. Marquardt, Phys. Lett. 102A, 365 (1984).
R. Mitra, T. Ungar, T. Morita, P.G. Sanders, and J.R. Weertman, in Advanced Materials for the 21st Century: The 1999 Julia R. Weertman Symposium, edited by Y-W. Chung, D.C. Dunand, P.K. Liaw, and G.B. Olson (TMS, Warrendale, PA, 1999), p. 553.
S.R. Agnew, B.R. Elliott, C.J. Youngdahl, K.J. Hemker, and J.R. Weertman, in Modeling of Structure and Mechanics of Materials from Microscale to Product, edited by. J.V. Carstensen, T. Leffers, T. Lorentzen, O.B. Pedersen, B.F. Sørensen, and G. Winther (Risø National Laboratory, Roskilde, Denmark, 1998), p. 1.
A.M. EI-Sherik, U. Erb, G. Palumbo, and K.T. Aust, Scripta Metall. Mater. 27, 1185 (1992).
F. Ebrahimi, G.R. Bourne, M.S. Kelly, and T.E. Matthews, Nanostruct. Mater. 11, 343 (1999).
K.T. Aust, Can. Metall. Quart. 34, 165 (1994).
D.G. Morris and M.A. Morris, Acta Metall. Mater. 39, 1763 (1991).
H. Hahn and R.S. Averback, J. Appl. Phys. 67, 1113 (1990).
G.M. Chow and A.S. Edelstein, Nanostr. Mater. 1, 107 (1992).
J.B. Savader, M.R. Scanlon, R.C. Carnrnarata, D.T. Smith, and C. Heyzelden, Scripta Metall. 36, 29 (1997).
A. Misra and M. Nastasi, J. Mater. Res. 14, 4466 (1999).
J. Musil and F. Regent, J. Vac. Sci. Technol. A 16, 3301 (1998).
M.N. Rittner, J.A. Eastman, and J.R. Weertman, Scripta Metall. Mater. 31, 841 (1994).
F.A. Doljack and R.W. Hoffman, Thin Solid Films 12, 71 (1972).
H.T.G. Hentzell, B. Anderson, and S-E. Karlsson, Acta Metall. 31, 2103 (1983).
C.R.M. Grovenor, H.T.G. Hentzell, and D.A. Smith, Acta Metall. 32, 773 (1984).
S.D. Dahlgren, W.L. Nicholson, M.D. Merz, W. Bollmann, J.F. Devlin, and R. Wang, Thin Solid Films 40, 345 (1977).
D.M. Mattox and G.J. Kominiak, J. Vac. Sci. Technol. 9, 528 (1972).
R.D. Bland, G.J. Kominiak, and D.M. Mattox, J. Vac. Sci. Tech. 11, 671 (1974).
R.F. Bunshah, Vacuum 20, 353 (1977).
K.N. Tu, in Treatise on Materials Science and Technology, Vol. 24: Preparation and Properties of Thin Films, edited by. K.N. Tu and R. Rosenberg (Academic Press, New York, 1982), p. 237.
L.I. Maissel, in Handbook of Thin Film Technology, edited by L.I. Maissel and R. Glang, (McGraw Hill, New York, 1983), p. 1.
E.S. Machlin, Materials Science in Microelectronics: The relationships between thin film processing and structure (Giro Press, Carton-on-Hudson, NY, 1995) p. 157.
R. Abermann, Vacuum 41, 1279 (1990).
M.F. Doerner and W.D. Nix, CRC Crit. Rev. Solid State Mater. Sci. 14, 225 (1988).
B.A. Movchan and A.V. Demshishin, Fiz. Met. Metalloved. 28, 653 (1969).
J.A. Thornton, J. Vac. Sci. Techol. 11, 666 (1974).
G.G. Stoney, Proc. Roy. Soc. London A82, 172 (1909).
P.L. Gai, E.I. Du Pont De Nemours and Company (Inc.), Wilmington, DE (private communication).
R.A. Schwarzer, in Trends and New Applications of Thin Films, edited by H. Hoffman (Trans Tech, Uetikon-Zuerich, Switzerland., 1998); Mater. Sci. Forum 287–288, 38 (1998).
C.C. Wong, H.I. Smith, and C.V. Thompson, Appl. Phys. Lett. 48, 335 (1986).
Powder Diffraction File, Card No. 4-850 Inorganic Phases, JCPDS International Centre for Diffraction Data, (Swarthmore, PA, 1989).
J.A. Thornton, Ann. Rev. Mater. Sci. 7, 239 (1977).
A. Misra and M. Nastasi, Appl. Phys. Lett. 75, 3123 (1999).
E.M. Zielinski, R.P. Vinci, and J.C. Bravman, J. Appl. Phys. 76, 4516 (1994).
C.V. Thompson, Ann. Rev. Mater. Sci. 20, 245 (1990).
E.B. Haugen, Probabilistic Approaches to Design (John Wiley and Sons, New York, 1968), p.47.
A. Misra, S. Fayeulle, H. Kung, T.E. Mitchell, and M. Nastasi, Appl. Phys. Lett., 73, 891 (1998).
J.A. Thornton, J. Vac. Sci. Tech. A 4, 3059 (1986).
M.Y. Fuks, L.S. Palatnik, A.A. Koz’ma, A.A. Nechitaylo, and O.N. Grigor’yev, Fiz. Metal. Metalloved. 28, 645 (1969).
R. Mitra, W.A. Chiou, J.R. Weertman, and R. Hoffman, in Proc. Microscopy and Microanalysis, edited by G.W. Bailey, W.G. Jerome, S. McKernan, J.F. Mansfield and R.L. Price (Springer Verlag, NY, 1999), Vol. 5, Suppl. 2, p. 834.
K.L. Chopra, Thin Film Phenomena (McGraw-Hill, New York, 1969), p. 137.
P. Wang, D.A. Thompson, and W.W. Smeltzer, Nucl. Inst. Meth. Phy. Res. 87/8, 97 (1985).
P. Wang, D.A. Thompson, and W.W. Smeltzer, Nucl. Inst. Meth. Phy. Res. B16, 288 (1986).
H.A. Atwater, C.V. Thompson,, and H.I. Smith, J. Appl. Phys. 62, 2337 (1988).
J.C. Liu, J. Li, and J.W. Mayer, in Processing and Characterization of Materials Using Ion Beams, edited by L.E. Rehn, J. Greene, and F.A. Smidt (Mater. Res. Soc. Symp. Proc. 128, Pittsburgh, PA, 1989), pp. 297–302.
J.A. Thornton, Thin Solid Films 40, 335 (1977).
H.F. Winters and E. Kay, J. Appl. Phys. 38, 3928 (1967).
B.J. Garrison and N. Winograd, J. Vac. Sci. Tech. 16, 789 (1979).
K.C. Thompson-Russell and J.W. Edington, Electron Microscope Specimen Preparation Techniques in Materials Science, Philips Technical Laboratory Monographs in Practical Electron Microscopy in Materials Science [(N.V. Philips’) Gloeilampenfabrieken, Eindhoven, The Netherlands, 1977], Vol. 5, pp. 13,14.
L. Eckertova, Physics of Thin Films (Plenum Press, New York, 1986), Chap. 4, p. 96.
D.A. Porter and K.E. Easterling, Phase Transformations in Metals and Alloys (Chapman and Hall, London, United Kingdom, 1991), Chap. 3, p. 110.
O. Beeck, Advan. Catalysis 2, 151 (1950).
D. Brennan, D.O. Hayward, and B.M.W. Trapnell, Proc. Roy. Soc. London A256, 81 (1960).
P.G. Sanders, Ph.D. Dissertation, Northwestern University, Evanston, IL (1996).
A.L. Shull and F. Spaepen, J. Appl. Phys. 80, 6243 (1996).
W.D. Nix and B.M. Clemens, J. Mater. Res. 14, 3467 (1999).
R.W. Hoffman, Thin Solid Films 34, 185 (1976).
J. Weertman and J.R. Weertman, Elementary Dislocation Theory, Macmillan Series in Materials Science (Collier-Macmillan, Toronto, Canada,1964), Chap. 6, p. 168.
R.L. Fleischer, in The Strengthening of Metals, edited by D. Peckner (Reinhold Press, New York, 1964), p. 93.
R.W. Hertzberg, Deformation and Fracture Mechanics of Engineering Materials (John Wiley and Sons, New York, 1989), Chap. 1, p.3.
E. Klokholm and B.S. Berry, J. Electrochem. Soc. 115, 823 (1968).
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Mitra, R., Hoffman, R.A., Madan, A. et al. Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films. Journal of Materials Research 16, 1010–1027 (2001). https://doi.org/10.1557/JMR.2001.0142
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DOI: https://doi.org/10.1557/JMR.2001.0142