Abstract
Zn1–xMgxO is an important material for optoelectronic devices. We synthesized this material using a solution-based route. We investigated in detail the structural behavior of this material system using x-ray diffraction and Raman spectroscopy. Mg substitution up to x ≈ 0.10 does not change the crystal structure, as revealed by x-ray diffraction and Raman spectroscopic studies. This synthesis route is also suitable to prepare thin films by spin coating with the possibility of p and n doping.
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Tomar, M.S., Melgarejo, R., Dobal, P.S. et al. Synthesis of Zn1–xMgxO and its structural characterization. Journal of Materials Research 16, 903–906 (2001). https://doi.org/10.1557/JMR.2001.0127
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DOI: https://doi.org/10.1557/JMR.2001.0127