Abstract
Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.
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P.S. Ho and T. Kwok, Rep. Prog. Phys. 52, 301 (1989).
C-K. Hu, M.B. Small, and P.S. Ho, J. Appl. Phys. 74, 969 (1993).
A.S. Oates, Microelectron. Reliab. 36, 925 (1996).
P.B. Ghate, in Proceedings of the 19th IEEE Annual Reliability Physics Symposium, edited by D.L. Burgess (IEEE, New Brunswick, NJ, 1981), p. 243.
S. Vaidya, R.J. Schutz, and A.K. Sinha, J. Appl. Phys. 55, 3514 (1984).
F. Neppl, F. Fischer, and J. Schwabe, in Proceedings of the 22nd IEEE Annual Reliability Physics Symposium, edited by L.A. Kasprzak (IEEE, New Brunswick, NJ, 1984), p. 185.
J.G.J. Chern, W.G. Oldham, and N. Cheung, IEEE Transactions on Electron Devices, ED-33, edited by D.L. Carter (IEEE, New Brunswick, NJ, 1986), p. 1256.
S.D. Steenwyk and E.F. Kankowski, in Proceedings of the 24th IEEE Annual Reliability Physics Symposium, edited by R.W. Thomas (IEEE, New Brunswick, NJ, 1986), p. 30.
J.C. Ondrusek, C.F. Dunn, and J.M. McPherson, in Proceedings of the 25th IEEE Annual Reliability Physics Symposium, edited by B.L. Euzent (IEEE, New Brunswick, NJ, 1987) p. 154.
L.Z. Chen and K.Y.J. Hsu, Solid State Electron. 43, 1031 (1999).
J.S. Huang, H.K. Liou, and K.N. Tu, Phys. Rev. Lett. 76, 2346 (1996).
J.S. Huang, K.N. Tu, S.W. Bedell, W.A. Lanford, S.L. Cheng, J.B. Lai, and L.J. Chen, J. Appl. Phys. 82, 2370 (1997).
J.S. Huang, C.N. Liao, K.N. Tu, S.L. Cheng, and L.J. Chen, J. Appl. Phys. 84, 4788 (1998).
H.H. Lin, K.N. Chen, S.L. Cheng, Y.C. Peng, G.H. Shen, L.J. Chen, and C.R. Chen, J. Korean Phys. Soc. 35, 264 (1999).
K.N. Chen, H.H. Lin, S.L. Cheng, Y.C. Peng, G.H. Shen, L.J. Chen, C.R. Chen, J.S. Huang, and K.N. Tu, J. Mater. Res. 14, 4720 (1990).
C.N. Liao, C. Chen, J.S. Huang, and K.N. Tu, J. Appl. Phys. 86, 6895 (1999).
L.A. Giannuzzi and F.A. Stevie, Micron 30, 197 (1999).
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Huang, J.S., Chen, C., Yeh, C.C. et al. Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator. Journal of Materials Research 15, 2387–2392 (2000). https://doi.org/10.1557/JMR.2000.0343
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DOI: https://doi.org/10.1557/JMR.2000.0343