Abstract
Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.
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References
C.E. Weitzel and K.E. Moore, J. Electron. Mater. 27, 365 (1998).
P.G. Neudeck, J. Electron. Mater. 24, 283 (1995).
D. Alok, P.K. McLarty, and B.J. Baliga, Appl. Phys. Lett. 64, 2845 (1994).
L.M. Porter and R.F. Davis, Mater. Sci. Eng. B34, 83 (1995).
R.J. Arsenault and C.S. Pande, Scr. Metall. 18, 1131 (1984).
D.J. Lloyd, H. Lagace, A. McLeod, and P.L. Morris, Mater. Sci. Eng. A107, 73 (1989).
J.C. Viala, F. Bosselet, V. Laurent, and Y. Lepetitcorps, J. Mater. Sci. 28, 5301 (1993).
J. Stoemenos, B. Pecz, and V. Heera, Appl. Phys. Lett. 74, 2602 (1999).
Z. Inoue, Y. Inomata, and H. Tanaka, J. Mater. Sci. 15, 575 (1980).
B.L. Kidwell, L.L. Oden, and R.A. McCune, J. Appl. Crystallogr. 17, 481 (1984).
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Lee, BT., Shin, YS. & Kim, J.H. High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC. Journal of Materials Research 15, 2284–2287 (2000). https://doi.org/10.1557/JMR.2000.0327
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DOI: https://doi.org/10.1557/JMR.2000.0327