Abstract
Polycrystalline Pb(ZrxTi1−x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450–525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.
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Koritala, R.E., Lanagan, M.T., Chen, N. et al. Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers. Journal of Materials Research 15, 1962–1971 (2000). https://doi.org/10.1557/JMR.2000.0283
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DOI: https://doi.org/10.1557/JMR.2000.0283