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Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature

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Abstract

Pb(Zr0.52Ti0.48)O3 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron-sputtering at a relatively low temperature (∼450 °C). X-ray diffraction measurements showed that the Pb(Zr0.52Ti0.48)O3 film layers grown on the InP substrates were polycrystalline, and Auger electron spectroscopy measurements indicated that the compositions of the as-grown films consisted of lead, zirconium, titanium, and oxygen. Transmission electron microscopy measurements showed that the grown Pb(Zr0.52Ti0.48)O3 was a polycrystalline layer with small domains and that the Pb(Zr0.52Ti0.48)O3/InP (100) heterointerface had no significant interdiffusion problem. Room-temperature current–voltage and capacitance–voltage (C–V) measurements clearly revealed a metal–insulator–semiconductor behavior for the Pb(Zr0.52Ti0.48)O3 insulator gates, and the interface state densities at the Pb(Zr0.52Ti0.48)O3/p-InP interfaces, as determined from the C–V measurements, were approximately low 1011 eV−1 cm−2 at an energy of about 0.6 eV below the conduction-band edge. The dielectric constant of the Pb(Zr0.52Ti0.48)O3 thin film, as determined from the C–V measurements, was as large as 907.2. These results indicate that the Pb(Zr0.52Ti0.48)O3 layers grown on p-InP (100) substrates at low temperatures hold promise for potential high-density nonvolatile memories and high-speed infrared sensors based on InP substrates.

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References

  1. C.W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).

    Book  Google Scholar 

  2. F. Capasso, Physics of Quantum Electron Devices (Springer, Heidelberg, Germany, 1990).

    Book  Google Scholar 

  3. C.S. Sundararaman, P. Milhelich, R.A. Masut, and J.F. Currie, Appl. Phys. Lett. 64, 2279 (1994).

    Article  CAS  Google Scholar 

  4. J. Faist, F. Capasso, D.L. Sivco, A.L. Hutchinson, S.N.G. Chu, and A.Y. Cho, Appl. Phys. Lett. 72, 680 (1998).

    Article  CAS  Google Scholar 

  5. T.W. Kim, M. Jung, D.U. Lee, Y.S. Lim, and J.Y. Lee, Appl. Phys. Lett. 73, 61 (1998).

    Article  CAS  Google Scholar 

  6. P.V. Staa, H. Rombach, and R. Kassing, J. Appl. Phys. 54, 4014 (1983).

    Article  Google Scholar 

  7. G.M. Davis and M.C. Gower, Appl. Phys. Lett. 55, 112 (1989).

    Article  CAS  Google Scholar 

  8. B.G. Potter, Jr., M.B. Sinclair, and D. Dimos, Appl. Phys. Lett. 63, 2180 (1993).

    Article  CAS  Google Scholar 

  9. F. Ayguavives, B.F. Kim, P. Aubert, B. Agius, and J. Bretagne, Appl. Phys. Lett. 73, 1023 (1989).

    Article  Google Scholar 

  10. N. Ikarashi, Appl. Phys. Lett. 73, 1955 (1998).

    Article  CAS  Google Scholar 

  11. Y. Zhu, J. Zhu, Y.J. Song, and S.B. Desu, Appl. Phys. Lett. 73, 1985 (1998).

    Article  Google Scholar 

  12. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981).

  13. L.M. Terman, Solid State Electron. 5, 285 (1962).

    Article  CAS  Google Scholar 

  14. T.W. Kim and S.S. Yom, Appl. Phys. Lett. 65, 1955 (1994).

    Article  CAS  Google Scholar 

  15. T.W. Kim, W.N. Kang, Y.S. Yoon, S.S. Yom, J.Y. Lee, C.Y. Kim, H. Lim, and H.L. Park, J. Appl. Phys. 74, 760 (1993).

    Article  CAS  Google Scholar 

  16. N-J. Seong, S-G. Yoon, and S-S. Lee, Appl. Phys. Lett. 71, 81 (1997).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, Kwangwoon Univrsity, 447-1 Wolgye-dong, 139-701, Nowon-ku, Seoul, Korea

    T. W. Kim

  2. Thin Film Technology Research Center, Korea Institute of the Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea

    Y. S. Yoon

Authors
  1. T. W. Kim
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  2. Y. S. Yoon
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Kim, T.W., Yoon, Y.S. Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature. Journal of Materials Research 15, 199–202 (2000). https://doi.org/10.1557/JMR.2000.0032

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  • DOI: https://doi.org/10.1557/JMR.2000.0032

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