Abstract
Silicide formation in implanted channels and interfacial reactions of Ni, Co, Ti, and Cu contacts under high current density have been investigated. Silicide lines, forming in the implanted channels, were observed in Ni and Cu/p +–Si samples but not in Ti and Co samples. The silicide line formation is correlated to the high diffusivity of metals in Si. For the Ni/p+–Si sambles, silicode line was found to initiate form the cathode contact. Network structures at the cathode were found in both Co and Ni samples. The depth of silicide formation was found to extend to the junction depth. The relationships between the silicide length and contact size, the applied current, and the method of the applied current are discussed.
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J.S. Huang, H.K. Liou, and K.N. Tu, Phys. Rev. Lett. 25, 2346 (1996).
J.S. Huang, K.N. Tu, S.W. Bedell, W.A. Lanford, S.L. Cheng, J.B. Lai, and L.J. Chen, J. Appl. Phys. 82, 2370 (1997).
J.S. Huang and K.N. Tu, in Diffusion Mechanisms in Crystalline Materials, edited by Y. Mishim, G. Vogl, N. Cowern, C. Callow, and D. Farkas (Mater. Res. Soc. Symp. Proc. 527, Warrendale, PA, 1998), p. 423.
W.J. Chen, F.R. Chen, and L.J. Chen, Appl. Phys. Lett. 60, 2201 (1992).
L.J. Chen. L.S. Hung, J.W. Mayer, J.E.E. Baglin, J.M. Neri, and D.A. Hammer, Appl. Phys. Lett. 40, 595 (1981).
J.X. Li, W.S. Yang, and T.Y. Tan, J. Appl. Phys. 71, 196 (1992).
M.A. Nicolet and S.S. Lau, in VLSI Electronics, Microstructures, and Science, edited by N.G. Einspruch and G.B. Larrabee (Academic Press, New York, 1983), Vol. 6, p. 330.
A. Yasuoka and T. Kuroi, Jpn. J. Appl. Phys. 36, 617 (1997).
T. Kuroi and S. Kusunoki, Digest of Technical Papers, 1994 IEEE Symposium on VLSI Technology, Honolulu, HI (IEEE, Piscataway, NJ, 1994), p. 107.
L.J. Chen, C.M. Doland, I.W. Wu, A. Chiang, J.J. Chu, S.W. Lu, and C.W. Nieh, J. Electron. Mater. 17, 75 (1988).
R.H. Wohlbier, Diffusion Data (Diffusion Information Center, Cleveland, OH, 1967), Vol. 1, No. 3, p. 32.
R.H. Wohlbier, Diffusion Data (Diffusion Information Center, Cleveland, OH, 1968), Vol. 2, No. 3/4, pp. 255, 292, 308.
R.H. Wohlbier, Diffusion Data (Diffusion Information Center, Cleveland, OH, 1970), Vol. 4, No. 1, p. 15.
R.H. Wohlbier, Diffusion Data (Diffusion Information Center, Cleveland, OH, 1970), Vol. 4, No. 2, p. 189.
R.H. Wohlbier, Diffusion and Defect Data (Diffusion Information Center, Cleveland, OH, 1978), Vol. 17, p. 186.
F.H.M. Spit, D. Gupta, and K.N. Tu, Phys. Rev. B 39, 1255 (1989).
J.W. Mayer and S.S. Lau, Electronic Material Science: For Integrated Circuits in Si and GaAs (MacMillan, New York, 1990), p. 206.
R.N. Hall and J.H. Racette, J. Appl. Phys. 35, 379 (1964).
D.A. Blackburn, R.E. Hummel, and H.B. Huntington, Electro-and Thermo-Transport in Metals and Alloys, eds. (AIME, New York, 1977), p. 20.
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Chen, K.N., Lin, H.H., Cheng, S.L. et al. Silicide formation in implanted channels and interfacial reactions of metal contacts under high current density. Journal of Materials Research 14, 4720–4726 (1999). https://doi.org/10.1557/JMR.1999.0639
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DOI: https://doi.org/10.1557/JMR.1999.0639