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A transmission electron microscopy investigation of sulfide nanocrystals formed by ion implantation

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Abstract

Ion implantation was used to form compound semiconductor nanocrystal precipitates of ZnS, CdS, and PbS in both glass and crystalline matrices. The precipitate microstructures and size distributions were investigated by cross-sectional transmission electron microscopy techniques. Several unusual features were observed, including strongly depth-dependent size variations of the ZnS precipitates and central void features in the CdS nanocrystals. The morphology and crystal structure of the nanocrystal precipitates could be controlled by selection of the host material. The size distribution and microstructural complexity were significantly reduced by implanting a low concentration of ions into a noncrystalline host, and by using multi-energy implants to give a flat concentration profile of the implanted elements.

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Authors and Affiliations

  1. Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA

    A. Meldrum, E. Sonder, R. A. Zuhr, I. M. Anderson, J. D. Budai, C. W. White & L. A. Boatner

  2. Department of Physics, Fisk University, Nashville, Tennessee, 37208, USA

    D. O. Henderson

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  1. A. Meldrum
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  2. E. Sonder
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  3. R. A. Zuhr
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  8. D. O. Henderson
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Meldrum, A., Sonder, E., Zuhr, R.A. et al. A transmission electron microscopy investigation of sulfide nanocrystals formed by ion implantation. Journal of Materials Research 14, 4489–4502 (1999). https://doi.org/10.1557/JMR.1999.0610

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  • DOI: https://doi.org/10.1557/JMR.1999.0610

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