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Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films

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Abstract

A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.

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Authors and Affiliations

  1. Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2J1, Canada

    I. A. Rauf & R. F. Egerton

  2. Department of Physics, Queen’s University, Kingston, Ontario, K7L 3N6, Canada

    R. Siemsen, M. Grunwell & M. Sayer

Authors
  1. I. A. Rauf
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  2. R. Siemsen
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  3. M. Grunwell
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  4. R. F. Egerton
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  5. M. Sayer
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Rauf, I.A., Siemsen, R., Grunwell, M. et al. Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films. Journal of Materials Research 14, 4345–4350 (1999). https://doi.org/10.1557/JMR.1999.0588

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  • DOI: https://doi.org/10.1557/JMR.1999.0588

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