Abstract
The mechanism for grain growth of β–SiC was investigated by annealing hot-pressed β–SiC–oxynitride glass (Y–Mg–Si–Al–O–N) ceramics at 1800 °C. An observed decrease in grain growth with increasing weight fraction of liquid confirms a diffusion-controlled growth mechanism in the system. The growth of nearly spherical β–SiC grains in the annealed specimen also supports the above conclusion.
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Kim, YW., Mitomo, M. & Zhan, GD. Mechanism of grain growth in liquid-phase-sintered β–SiC. Journal of Materials Research 14, 4291–4293 (1999). https://doi.org/10.1557/JMR.1999.0581
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DOI: https://doi.org/10.1557/JMR.1999.0581