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Epitaxial growth of magnesia and spinel on sapphire during incongruent reduction in molten magnesium

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Abstract

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished \(\{ 10\overline 1 0\} \) faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships: \({(10\overline 1 0)_{{\rm{Sapphire}}}}\parallel {(110)_{{\rm{Spinel}}}}\parallel {(110)_{{\rm{Magnesia}}}}/{[0001]_{{\rm{Sapphire}}}}\parallel {[111]_{{\rm{Spinel}}}}\parallel {[111]_{{\rm{Magnesia}}}}\).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, The Ohio State University, 477 Watts Hall, 116 West 19th Avenue, 43210, Columbus, OH, USA

    P. Kumar, S. A. Dregia & K. H. Sandhage

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  1. P. Kumar
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  2. S. A. Dregia
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  3. K. H. Sandhage
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Kumar, P., Dregia, S.A. & Sandhage, K.H. Epitaxial growth of magnesia and spinel on sapphire during incongruent reduction in molten magnesium. Journal of Materials Research 14, 3312–3318 (1999). https://doi.org/10.1557/JMR.1999.0448

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