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High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

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Abstract

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

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Authors and Affiliations

  1. Centre d’Elaboration des Matériaux et d’Etudes Structurales, CEMES/CNRS, Toulouse cedex 04, BP 4347 31055, France

    Ch. Grigis, S. Schamm & D. Dorignac

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  1. Ch. Grigis
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  2. S. Schamm
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  3. D. Dorignac
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Grigis, C., Schamm, S. & Dorignac, D. High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films. Journal of Materials Research 14, 2732–2738 (1999). https://doi.org/10.1557/JMR.1999.0366

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  • DOI: https://doi.org/10.1557/JMR.1999.0366

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