Abstract
Epitaxially laterally overgrown GaN on sapphire was used to reduce the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO2 mask area surrounding the window and corresponding to the lateral overgrowth was nearly free of threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multiquantum well-structure laser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any interference effects.
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References
S. Nakamura and G. Fasol, The Blue Laser Diode, 1st ed. (Springer-Verlag, Heidelberg, Germany, 1997).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 1477 (1996).
K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi, and M. Ishikawa, Jpn. J. Appl. Phys. 35, L1315 (1996).
G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, H.S. Kong, H.M. Dieringer, J.A. Edmond, J.D. Brown, J.T. Swindell, and J.F. Schetzena, Electron. Lett. 33, 1556 (1997).
M.P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L. Coldren, and S. DenBaars, MRS Internet J. Nitride Semicond. Res. 2, 41 (1997) (available from http://nsr.mij.mrs.org/2/41//2/41/).
A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi, Jpn. J. Appl. Phys. 36, L1130 (1997).
F. Nakamura, T. Kobayashi, T. Tojo, T. Asatsuma, K. Naganuma, H. Kawai, and M. Ikeda, Electron. Lett. 34, 1105 (1998).
M. Kneissl, D.P. Bour, N.M. Johnson, L.T. Romano, B.S. Krusor, R. Donaldson, J. Walker, and C. Dunnrowicz, Appl. Phys. Lett. 72, 1539 (1998).
H. Kato, T. Takeuchi, C. Anbe, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, and N. Yamada, Jpn. J. Appl. Phys. 37, L444 (1998).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 4056 (1996).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 3034 (1996).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Jpn. J. Appl. Phys. 36, L1059 (1997).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys. 37, L309 (1998).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys. 37, L627 (1998).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys. 36, L15768 (1997).
S. Nakamura, IEEE J. Selective Topics in Quantum Electron. 3, 435 (1997).
S. Nakamura, IEEE J. Selective Topics in Quantum Electron. 3, 712 (1997).
J.W. Matthews and A.E. Blakeslee, J. Crystal Growth 27, 118 (1974).
Z. Sitar, M.J. Paisley, B. Yan, J. Ruan, W.J. Choyke, and R.F. Davis, J. Vac. Sci. Technol. B8, 316 (1990).
M.A. Khan, R.A. Skogman, and J.M. Vanhove, Appl. Phys. Lett. 56, 1257 (1990).
A. Usui, H. Sunakawa, A. Sakai, and A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).
A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).
O.H. Nam, M.D. Bremser, T. Zheleva, and R.F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
T.S. Zheleva, O.H. Nam, M.D. Bremser, and R.F. Davis, 71, 2472 (1997).
Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth, 144, 133 (1994).
S.D. Lester, F.A. Ponce, M.G. Craford, and D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).
S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
M. Yamada, IEEE J. Quantum Electron. 29, 1330 (1993).
C.H. Lee, S.Y. Shin, and S.G. Kang, IEEE J. Qunatum Electron. 30, 1396 (1994).
R.C.P. Hoskens and T.G. Roer, Appl. Phys. Lett. 67, 1343 (1995).
S. Yamashita, A. Ohishi, T. Kajimura, M. Inoue, and Y. Fukui, IEEE J. Quantum Electron. QE-25, 1483 (1989).
T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, and K. Itoh, Appl. Phys. Lett. 65, 1211 (1994).
M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys. 35, 1420 (1996).
M. Suzuki and T. Uenoyama, Appl. Phys. Lett. 69, 3378 (1996).
W.W. Chow, A.F. Wright, and J.S. Nelson, Appl. Phys. Lett. 68, 296 (1996).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998).
S. Strite and H. Morkoc¸, J. Vac. Sci. Technol. B 10, 1237 (1992).
D. Hofstetter, D.P. Bour, R.L. Thornton, and N.M. Johnson, Appl. Phys. Lett. 70, 1650 (1997).
I.A. Avrutsky, R. Gordon, R. Clayton, and J.M. Xu, IEEE J. Quantum Electron. 33, 1801 (1997).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 616 (1997).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 2753 (1997).
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Nakamura, S. InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN. Journal of Materials Research 14, 2716–2731 (1999). https://doi.org/10.1557/JMR.1999.0365
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DOI: https://doi.org/10.1557/JMR.1999.0365