Abstract
The nanostructure of GaN and SiC nanowires produced by carbon nanotube confined reaction has been studied by means of high-resolution electron microscopy, microanalysis, and microdiffraction. The GaN nanowire is a single crystal with fewer defects and the SiC nanowire is a β–SiC crystal with heavy layer sequence faults. Considering experimental results, a possible reaction path for making GaN is suggested.
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Zhu, J., Fan, S. Nanostructure of GaN and SiC Nanowires Based on Carbon Nanotubes. Journal of Materials Research 14, 1175–1177 (1999). https://doi.org/10.1557/JMR.1999.0156
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DOI: https://doi.org/10.1557/JMR.1999.0156