Abstract
A 13.56 MHz low pressure inductively coupled plasma (ICP) has been applied to prepare diamond films. The Faraday shield drastically suppressed the electrostatic coupling, which frequently causes contamination due to the etching of the quartz tube. The characterizations of the obtained deposits by scanning electron microscopy (SEM), transmission electron diffraction (TED), and reflection high energy electron diffraction (RHEED) revealed that the deposits are composed of microcrystalline diamond and disordered microcrystalline graphite. The CO additive to a CH4/H2 plasma brought about the morphological change from a scale-like deposit to a particle one. Besides, the number of encountered particles was increased with an increase of CO additive. The TED and RHEED observations showed that non-diamond carbon was effectively removed with an increase of CO additive. These results indicate that oxygen-contained radicals produced by the addition of CO play an effective role in the removal of non-diamond carbon in the diamond growth conditions and that the CO additive makes the supersaturation degree of carbon large.
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Okada, K., Komatsu, S. & Matsumoto, S. Preparation of microcrystalline diamond in a low pressure inductively coupled plasma. Journal of Materials Research 14, 578–583 (1999). https://doi.org/10.1557/JMR.1999.0082
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DOI: https://doi.org/10.1557/JMR.1999.0082