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Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

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Abstract

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

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Authors and Affiliations

  1. Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, LS2 9JT, Leeds, United Kingdom

    S. Arscott & R. E. Miles

  2. School of Chemistry, The University of Leeds, LS2 9JT, Leeds, United Kingdom

    J. D. Kennedy

  3. School of Materials, The University of Leeds, LS2 9JT, Leeds, United Kingdom

    S. J. Milne

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  1. S. Arscott
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  2. R. E. Miles
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  3. J. D. Kennedy
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  4. S. J. Milne
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Arscott, S., Miles, R.E., Kennedy, J.D. et al. Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route. Journal of Materials Research 14, 494–499 (1999). https://doi.org/10.1557/JMR.1999.0070

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