Skip to main content
SpringerLink
Log in

Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

A systematic investigation has been made on surface defect states of crystallites in the crystallization process of sputtered amorphous silicon films by isothermal annealing. Transmission electron microscopic observations indicate a pronounced vertical columnar structure in the upper part of the films, where the crystallization is delayed. Admittance spectroscopy reveals that two newly generated energy levels with the crystallization are attributed to the crystallites in the lower and upper parts of the films in view of the anisotropic crystallization. These thermally induced changes can be well explained by Si–Si shearing modes at the interfaces of crystallites through the process of crystallization.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Werner, W. Jantsch, and H. J. Queisser, Solid State Commun. 42, 415 (1982).

    Article  CAS  Google Scholar 

  2. W.B. Jackson, N.M. Johnson, and D. K. Biegelsen, Appl. Phys. Lett. 43, 195 (1983).

    Article  CAS  Google Scholar 

  3. J. Werner and M. Peisl, Phys. Rev. B 31, 6881 (1985).

    Article  CAS  Google Scholar 

  4. Z. Iqbal and S. Veprek, J. Phys. C.: Solid State Phys. 15, 377–392 (1982).

    Article  CAS  Google Scholar 

  5. K.G. Kanellis, J.F. Morhange, and M. Balkanski, Phys. Rev. B 21, 1543 (1980).

    Article  CAS  Google Scholar 

  6. R. Tsu, J.G. Hernandez, S.S. Chao, S. C. Lee, and K. Tanaka, Appl. Phys. Lett. 40, 534 (1982).

    Article  CAS  Google Scholar 

  7. N.M. Johnson, D.K. Biegelsen, M. D. Moyer, and S. T. Chang, Appl. Phys. Lett. 43, 563 (1983).

    Article  CAS  Google Scholar 

  8. P. Danesh, A. Szekeres, and S. Kaschieva, Solid-State Electronics 38, 1179 (1995).

    Article  CAS  Google Scholar 

  9. M. Kohyama and R. Yamamoto, Phys. Rev. B 50, 8502 (1994).

    Article  CAS  Google Scholar 

  10. M. Kohyama, J. Phys.: Condens. Matter 3, 2193 (1991).

    Google Scholar 

  11. Y. Nakano, J. Sakata, and Y. Taga, unpublished.

Download references

Author information

Authors and Affiliations

  1. Toyota Central Research and Development Laboratories, Inc., 480-1192, Nagakute, Aichi, Japan

    Yoshitaka Nakano, Jiro Sakata & Yasunori Taga

Authors
  1. Yoshitaka Nakano
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jiro Sakata
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yasunori Taga
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yoshitaka Nakano.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Nakano, Y., Sakata, J. & Taga, Y. Formation process of interface states at grain boundaries in sputtered polycrystalline Si films. Journal of Materials Research 14, 371–376 (1999). https://doi.org/10.1557/JMR.1999.0054

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1999.0054

Search

Navigation