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Stress evolution in passivated thin films of Cu on silica substrates

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Abstract

Stresses supported by thin films of Cu passivated by SiOx have been measured upon thermal cycling. Very high stresses have been found, approaching 1 GPa in the thinnest (40 nm) films. Strengthening beyond yield occurs upon both cooling and heating, indicative of strong strain hardening in the Cu. The hardening continues down to at least 77 K. The yielding behavior of the Cu films has been characterized by a kinematic constitutive law, with exceptional strain hardening and a conventional temperature-dependent yield strength. The physical basis for this behavior is ascribed to confined shear bands in the Cu that induce large back stress. Transmission electron microscopy reveals aligned dislocations, which seemingly dictate the inelastic deformations in the shear bands.

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Authors and Affiliations

  1. Departments of Materials Science and Mechanical Engineering, M.I.T., Cambridge, 02139, Massachusetts, USA

    Y-L. Shen & S. Suresh

  2. M.I.T.–Harvard Program on Modeling of Materials, Division of Engineering and Applied Sciences, Harvard University, Cambridge, 02138, Massachusetts, USA

    M. Y. He & A. Bagchi

  3. Max Planck Institut f¨ur Metallforschung, Seestrasse 92, Stuttgart, Germany

    O. Kienzle & M. Rühle

  4. M.I.T.–Harvard Program of Modeling of Materials, Division of Engineering and Applied Sciences, Harvard University, Cambridge, 02138, Massachusetts, USA

    A. G. Evans

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  1. Y-L. Shen
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  2. S. Suresh
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  3. M. Y. He
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  4. A. Bagchi
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  5. O. Kienzle
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Shen, YL., Suresh, S., He, M.Y. et al. Stress evolution in passivated thin films of Cu on silica substrates. Journal of Materials Research 13, 1928–1937 (1998). https://doi.org/10.1557/JMR.1998.0272

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  • DOI: https://doi.org/10.1557/JMR.1998.0272

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