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Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma

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Abstract

Silicon was pulse biased to −45 kV in a methane plasma generated by microwave excitation in the electron cyclotron resonance (ECR) mode. Hydrocarbon ions were accelerated in the electrical field and implanted into the silicon. Rutherford backscattering (RBS) measurements showed that it is possible to incorporate a concentration of up to 95 at.% C into the Si. Cross-section transmission microscopy (XTEM) showed that the resulting surface layer was amorphous. Annealing at 1250 °C resulted in the formation of 10 to 60 nm thick, crystalline SiC layers.

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Authors and Affiliations

  1. Universität Augsburg, Institut für Physik, 86135, Augsburg, Germany

    K. Volz, W. Ensinger, W. Reiber, B. Rauschenbach & B. Stritzker

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  1. K. Volz
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  2. W. Ensinger
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  3. W. Reiber
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  4. B. Rauschenbach
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  5. B. Stritzker
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Volz, K., Ensinger, W., Reiber, W. et al. Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma. Journal of Materials Research 13, 1765–1768 (1998). https://doi.org/10.1557/JMR.1998.0248

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  • DOI: https://doi.org/10.1557/JMR.1998.0248

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