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Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient

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Abstract

Carbon nitride thin films have been successfully deposited by ablating a graphite target (99.999%) in nitrogen gas ambient using the second (532 nm) or third (355 nm) harmonic of a Q-switched Nd : YAG laser. Carbon nitride films consisting of approximately 40% nitrogen were obtained at 7.5 × 10−3 Pa of nitrogen gas pressure using the third harmonic laser. The C–N chemical bond in the films was observed by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Ellipsometric studies revealed that the refractive index of the fabricated films decreased with increasing nitrogen concentration.

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Author notes

  1. Masayuki Okoshi

    Present address: Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi, 441, Japan

Authors and Affiliations

  1. Laser Science Research Group, The Institute of Physical and Chemical Research, (Riken), 2-1 Hirosawa, Wako, Saitama, 351-01, Japan

    Masayuki Okoshi, Hiroshi Kumagai & Koichi Toyoda

Authors
  1. Masayuki Okoshi
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  2. Hiroshi Kumagai
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  3. Koichi Toyoda
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Okoshi, M., Kumagai, H. & Toyoda, K. Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient. Journal of Materials Research 12, 3376–3379 (1997). https://doi.org/10.1557/JMR.1997.0443

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  • DOI: https://doi.org/10.1557/JMR.1997.0443

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