Abstract
Vanadium dioxide thin films (VO2) have been deposited by laser ablation. The temperature dependence of resistivity and temperature coefficient of resistance (TCR) for each deposition condition were investigated. It was clarified that the TCR at room temperature (RT) can be optimized by controlling the oxygen pressure introduced during deposition as the deposition parameter. In the result, larger TCR’s at RT were observed for the oxygen deficient condition of VO2 than for oxygen-richer samples. Obtained TCR values were 0.072/K and 0.045/K at 25°C for VO2 thin films deposited onto R-cut sapphire and SiO2/Si, respectively.
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Nagashima, M., Wada, H. The oxygen deficiency effect of VO2 thin films prepared by laser ablation. Journal of Materials Research 12, 416–422 (1997). https://doi.org/10.1557/JMR.1997.0061
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DOI: https://doi.org/10.1557/JMR.1997.0061