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Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride

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Abstract

A BN film containing comparable amounts of sp 2 and sp 3 phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1% CH4 in H2. After a partial etch, examination by FTIR shows that the sp 2 was preferentially etched, leaving a larger sp 3 fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed.

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Authors and Affiliations

  1. Physics and Physical Chemistry Department, General Motors R–D Center, 48090-9055, Warren, Michigan, USA

    Stephen J. Harris, Anita M. Weiner, Gary L. Doll & Wen-Jin Meng

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  1. Stephen J. Harris
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  2. Anita M. Weiner
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  3. Gary L. Doll
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  4. Wen-Jin Meng
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Harris, S.J., Weiner, A.M., Doll, G.L. et al. Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride. Journal of Materials Research 12, 412–415 (1997). https://doi.org/10.1557/JMR.1997.0060

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  • DOI: https://doi.org/10.1557/JMR.1997.0060

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