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Aluminum nitride buffer layer for diamond film growth

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Abstract

The role of aluminum nitride (AlN) as a buffer layer on the nucleation and growth of diamond on silicon and steel substrates during hot filament chemical vapor deposition (HF-CVD) has been investigated systematically. The scanning Auger electron microscopy (AES) is employed to study chemistry and content of carbon on the surface and in subsurface regions of AlN as a function of HF-CVD parameters. It is found that AlN offers an excellent diffusion barrier for carbon over a wide range of temperature and hydrocarbon content of CVD gas environment, with simultaneous inhibition of graphitization. It also facilitates nucleation of diamond phase. The surface reactions between AlN and carbon are discussed in terms of hydrogen-assisted phase transformations. We have developed a two-step procedure to obtain a continuous diamond film on steel substrates. The characteristic features of AlN have been exploited to obtain adherent and graphite-free diamond deposits on various types of steels, including low carbon steel, tool steel, high speed steel, and bearing steel.

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References

  1. J. E. Butler and R. L. Woodin, Philos. Trans. R. Soc. London A 342, 209 (1993).

    Article  CAS  Google Scholar 

  2. P. E. Pehrsson, F. G. Celii, and J. E. Butler, in Diamond Films and Coatings, edited by R. F. Davis (Noyes Publications, Park Ridge, NJ, p. 68.

  3. W. A. Yarbrough and R. Messier, Science 24, 688 (1990).

    Article  Google Scholar 

  4. J. C. Angus, Y. Wang, and M. Sunkara, Annu. Rev. Mater. Sci. 21, 221 (1991).

    Article  CAS  Google Scholar 

  5. P. S. Weiser, S. Prawer, A. Hoffman, R. Manory, J. K. Paterson, and S. Stuart, J. Appl. Phys. 72 (10), 4643 (1992).

    Article  CAS  Google Scholar 

  6. T. P. Ong and R. P. H. Chang, Appl. Phys. Lett. 58, 358 (1991).

    Article  CAS  Google Scholar 

  7. V. P. Godbole and J. Narayan, J. Appl. Phys. 71, 4944 (1992); J. Mater. Res. 7, 2785 (1992).

    Article  CAS  Google Scholar 

  8. X. Chen and J. Narayan, J. Appl. Phys. 74 (6), 4168 (1993).

    Article  CAS  Google Scholar 

  9. D. N. Belton and S. J. Schmieg, J. Appl. Phys. 66 (9), 4223 (1989), and J. Vac. Sci. Technol. A 8, 23 531 (1990).

    Article  CAS  Google Scholar 

  10. J. Narayan, V. P. Godbole, G. Matera, and R. K. Singh, J. Appl. Phys. 2, 966 (1992).

    Article  Google Scholar 

  11. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10 (4), 1237 (1992).

    Article  CAS  Google Scholar 

  12. G. A. Slack, J. Phys. Chem. Solids 34, 321 (1973).

    Article  CAS  Google Scholar 

  13. R. F. Davis, Proc. IEEE 79, 702 (1991).

    Article  CAS  Google Scholar 

  14. R. D. Vispute, H. Wu, K. Jagannadham, and J. Narayan, J. Appl. Phys. 77, 4724 (1995).

    Article  CAS  Google Scholar 

  15. R. D. Vispute, H. Wu, and J. Narayan, Appl. Phys. Lett. 67, 1549 (1995).

    Article  CAS  Google Scholar 

  16. W. J. Meng, J. Heremans, and Y. T. Cheng, Appl. Phys. Lett. 59 (17), 2097 (1991).

    Article  CAS  Google Scholar 

  17. M. G. Norton, P. G. Kotula, and C. B. Carter, J. Appl. Phys. 70 (5), 2871 (1991).

    Article  CAS  Google Scholar 

  18. D. S. Knight and W. B. White, J. Mater. Res. 4, 385 (1989).

    Article  CAS  Google Scholar 

  19. W. Zhu, H. S. Kong, and J.T. Glass, in Diamond Films and Coatings, edited by R. F. Davis (Noyes Publications, Park Ridge, NJ, (1993), p. 268.

    Google Scholar 

  20. P. G. Lurie and J.M. Wilson, Surf. Sci. 65, 476 (1977).

    Article  CAS  Google Scholar 

  21. H. H. Madden, J. Vac. Sci. Technol. A 18, 677 (1981).

    Article  CAS  Google Scholar 

  22. O. Kubaschewski and C. B. Alcock, Metallurgical ThermoChemistry, 5th ed. (Pergamon Press, New York, 1979), p. 268.

    Google Scholar 

  23. Thermodynamical data of pure substances: Part I. by Barin in collaboration with F. Sauert, E. S. Rhonhof, and W. S. Sheng (VCH Verlagsgesellschaft mbH, D-6940 Weinheim, Germany, 1989) (VCH Publishers, New York, 1989), pp. 26, 42.

  24. A. Y. Liu and M. L. Cohen, Science 245, 841 (1989).

    Article  CAS  Google Scholar 

  25. C. Niu, Y. Z. Lu, and C. M. Lieber, Science 261, 334 (1993).

    Article  CAS  Google Scholar 

  26. G. A. Slack and S. F. Bartram, J. Appl. Phys. 46, 89 (1975).

    Article  CAS  Google Scholar 

  27. H. Yang and J.L. Whitten, J. Chem. Phys. 96, 5529 (1992).

    Article  CAS  Google Scholar 

  28. J. Li, L. Wang, T. Suzuki, A. Argoitia, P. Pirouz, and J. C. Angus, J. Appl. Phys. 73, 711 (1993).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science / Engineering, North Carolina State University, North Carolina, 27695–7916, Raleigh, USA

    V. P. Godbole & J. Narayan

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  1. V. P. Godbole
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  2. J. Narayan
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Godbole, V.P., Narayan, J. Aluminum nitride buffer layer for diamond film growth. Journal of Materials Research 11, 1810–1818 (1996). https://doi.org/10.1557/JMR.1996.0228

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  • DOI: https://doi.org/10.1557/JMR.1996.0228

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