Abstract
A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.
Similar content being viewed by others
References
L. Chen and K. Tu, Mat. Sci. Rep. 6, 53 (1991).
C. Osburn, in Rapid Thermal Processing, Science and Technology, edited by R. B. Fair (Academic Press, Inc., Boston, 1993), p. 227.
L. A. Clevenger and R.W. Mann, in Silicides, Germanides, and Their Interfaces, edited by R. W. Fathauer, S. Mantl, L. J. Schowalter, and K. N. Tu (Mater. Res. Soc. Symp. Proc. 320, Pittsburgh, PA, 1994), p. 15.
J. Winnerl, in Silicides, Germanides, and Their Interfaces, edited by R. W. Fathauer, S. Mantl, L.J. Schowalter, and K.N. Tu (Mater. Res. Soc. Symp. Proc. 320, Pittsburgh, PA, 1994), p. 37.
L. J. Chen, W. Lur, J. F. Chen, T. L. Lee, and J. M. Liang, in Rapid Thermal and Integrated Processing III, edited by J. J. Wortman, J. C. Gelpey, M. L. Green, S. R. J. Brueck, and F. Roozeboom (Mater. Res. Soc. Symp. Proc. 342, Pittsburgh, PA, 1994), p. 99.
H. Jeon, C. A. Sukow, J. W. Honeycutt, T. P. Humphreys, R. J. Nemanich, and G. A. Rozgonyi, in Advanced Metallizations in Microelectronics, edited by A. Katz, S. P. Murarka, and A. Appelbaum (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 569.
R. Mann, C. Racine, and R. Bass, in Rapid Thermal and Integrated Processing, edited by J. Gelpey, M. Green, R. Singh, and J. Wortman (Mater. Res. Soc. Symp. Proc. 224, Pittsburgh, PA, 1991), p. 115.
A. K. Nanda, S. Meester, and C. W. Wilkins, in Rapid Thermal and Integrated Processing III, edited by J.J. Wortman, J. C. Gelpey, M. L. Green, S. R. J. Brueck, and F. Roozeboom (Mater. Res. Soc. Symp. Proc. 342, Pittsburgh, PA, 1994), p. 111.
J. Winnerl, Semiconductor Int. 17, 81 (Aug. 1994).
S. Chen, A. Sakamoto, H. Tamura, M. Yoshimaru, and M. Ino, in Advanced Metallizations in Microelectronics, edited by A. Katz, S. P. Murarka, and A. Appelbaum (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 179.
J. Nulman, in Advanced Metallizations in Microelectronics, edited by A. Katz, S. P. Murarka, and A. Appelbaum (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 123.
W. M. Chen, J. C. Lee, and M. R. Frost, in Silicides, Germanides, and Their Interfaces, edited by R. W. Fathauer, S. Mantl. L. J. Schowalter, and K. N. Tu (Mater. Res. Soc. Symp. Proc. 320, Pittsburgh, PA, 1994), p. 47.
A. Wang and J. Lien, in VLSI Science and Technology/1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology, edited by W. M. Bullis and S. Broydo (The Electrochemical Society, Inc., Pennington, NJ, 1985), Vol. 85-5, p. 203.
H. Norstrom, K. Maex, and P. Vandenabeele, in Advanced Metallizations in Microelectronics, edited by A. Katz, S. P. Murarka, and A. Appelbaum (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 173.
R. Fulks, in Rapid Thermal Processing of Electronic Materials, edited by S. R. Wilson, R. Powell, and D. E. Davies (Mater. Res. Soc. Symp. Proc. 92, Pittsburgh, PA, 1987), p. 249.
D. Hodul and S. Mehta, in Rapid Thermal Processing of Electronic Materials, edited by S. R. Wilson, R. Powell, and D. E. Davies (Mater. Res. Soc. Symp. Proc. 92, Pittsburgh, PA, 1987), p. 183.
R. B. Fair, in Rapid Thermal Processing, Science and Technology, edited by R. B. Fair (Academic Press, Inc., Boston, 1993), p. 1.
H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, and R. J. Nemanich, J. Appl. Phys. 71, 4269 (1992).
F. Richter, E. Bugiel, H. B. Erzgraber, and D. Panknin, J. Appl. Phys. 72, 815 (1992).
L. A. Clevenger, R. W. Mann, R. A. Roy, K. L. Saenger, C. Cabral, Jr., and J. Piccirillo, J. Appl. Phys. 76, 7874 (1994).
M. S. Phadke, Quality Engineering Using Robust Design (Prentice Hall, Englewood Cliffs, NJ, 1989).
R. H. Lochner and J. E. Matar, Designing for Quality (Quality Resources, White Plains, NY, 1990).
R. G. Petersen, Design and Analysis of Experiments (Marcel Dekker, Inc., New York, 1985), pp. 112, 167.
D. C. Montgomery, Design and Analysis of Experiments, 3rd ed. (John Wiley & Sons, New York, 1991), pp. 270, 377.
A. D. Rickmers and H. N. Todd, Statistics, An Introduction (McGraw-Hill Book Company, New York, 1967), pp. 289, 335.
S. M. Sze, Semiconductor Devices, Physics and Technology (John Wiley and Sons, New York, 1985).
L. I. Maissel, in Handbook of Thin Film Technology, edited by L.I. Maissel and R. Glang (McGraw-Hill Book Company, New York, 1970), p. 13–5.
S. P. Murarka, Silicides for VLSI Applications (Academic Press, Inc., Orlando, FL, 1983).
M. D. Naeem, W. A. Orr-Arienzo, and J.G. Rapp, Appl. Phys. Lett. 66, 877 (1995).
M. Nicolet and S. Lau, in VLSI Handbook, edited by N. G. Einspruch (Academic Press, Inc., Orlando, FL, 1985), p. 415.
Z. Ma, G. Ramanath, and L. H. Allen, in Silicides, Germanides and Their Interfaces, edited by R. W. Fathauer, S. Mantl, L. J. Schowalter, and K. N. Tu (Mater. Res. Soc. Symp. Proc. 320, Pittsburgh, PA, 1994), p. 361.
R. W. Berry, P. M. Hall, and M. T. Harris, Thin Film Technology (D. Van Nostrand Company, Inc., Princeton, NJ, 1968).
J. L. Vossen and J. Cuomo, in Thin Film Processes, edited by J. L. Vossen and W. Kern (Academic Press, Inc., New York, 1978), p. 12.
R. Beyers, D. Coulman, and P. Merchant, J. Appl. Phys. 61, 5110 (1987).
R. Beyers and R. Sinclair, J. Appl. Phys. 57, 5240 (1985).
L. A. Clevenger, J. M. E. Harper, C. Cabral, Jr., C. Nobili, G. Ottaviani, and R. Mann, J. Appl. Phys. 72, 4978 (1992).
K. Srikrishna, R. Jairath, and G. Huglin, in Rapid Thermal and Integrated Processing, edited by J. Gelpey, M. Green, R. Singh, and J. Wortman (Mater. Res. Soc. Symp. Proc. 224, Pittsburgh, PA, 1991), p. 123.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Amorsolo, A.V., Funkenbusch, P.D. & Kadin, A.M. A parametric study of titanium silicide formation by rapid thermal processing. Journal of Materials Research 11, 412–421 (1996). https://doi.org/10.1557/JMR.1996.0050
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1996.0050